IRF1010NPBF
IRF1010NPBF
  • ACTIVE
  • EAR99
Product description : Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
SPQ:1
Datasheet : --
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Qg - Gate Charge: 80 nC
Packaging: Tube
Manufacturer: Infineon
Transistor Polarity: N-Channel
Technology: Si
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 55 V
Unit Weight: 0.211644 oz
Mounting Style: Through Hole
Rds On - Drain-Source Resistance: 11 mOhms
Number of Channels: 1 Channel
Pd - Power Dissipation: 130 W
Factory Pack Quantity: 50
Brand: Infineon Technologies
Package / Case: TO-220-3
Id - Continuous Drain Current: 72 A
Vgs - Gate-Source Voltage: 20 V
Transistor Type: 1 N-Channel
ECCN EAR99
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Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock4656Update On
2025-05-07
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SPQ/MOQ1/1
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Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$1.95316

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stock5620Update On
2022-12-11
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