IRF1010NPBF | ||
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Product description : Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 | ||
SPQ:1 | ||
Datasheet : -- |
Qg - Gate Charge: | 80 nC |
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Packaging: | Tube |
Manufacturer: | Infineon |
Transistor Polarity: | N-Channel |
Technology: | Si |
RoHS: | Details |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 55 V |
Unit Weight: | 0.211644 oz |
Mounting Style: | Through Hole |
Rds On - Drain-Source Resistance: | 11 mOhms |
Number of Channels: | 1 Channel |
Pd - Power Dissipation: | 130 W |
Factory Pack Quantity: | 50 |
Brand: | Infineon Technologies |
Package / Case: | TO-220-3 |
Id - Continuous Drain Current: | 72 A |
Vgs - Gate-Source Voltage: | 20 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Supplier Stock
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
stock | 4656 | Update On 2025-05-07 |
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Lead-Time | -- | |
SPQ/MOQ | 1/1 | |
Location | -- | |
DateCode | -- |
Supplier Code:SP1027
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
See more prices
1+ | $1.95316 |
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10+ | $1.81366 |
100+ | $1.37222 |
250+ | $1.35842 |
500+ | $1.26573 |
1000+ | $1.08469 |
2000+ | $1.0833 |
5000+ | $0.86971 |
stock | 5620 | Update On 2022-12-11 |
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Lead-Time | 24Weeks | |
Supplier SPQ/MOQ | 1/1 | |
Location | -- | |
DateCode | 2231 |
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