IRFD120PBF
  • 量产中
产品描述:
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP-4
标准包装:1
数据手册: --
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安装类型 通孔
FET 类型 MOSFET N 通道,金属氧化物
不同 Id 时的 Vgs(th)(最大值) 4V @ 250µA
不同 Vgs 时的栅极电荷(Qg) 16nC @ 10V
电流 - 连续漏极(Id)(25°C 时) 1.3A(Ta)
漏源极电压(Vdss) 100V
封装/外壳 4-DIP(0.300",7.62mm)
FET 功能 标准
供应商器件封装 4-DIP,Hexdip,HVMDIP
不同 Id,Vgs 时的 Rds On(最大值) 270 毫欧 @ 780mA,10V
不同 Vds 时的输入电容(Ciss) 360pF @ 25V
功率 - 最大值 1.3W
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