EMF24T2R specifications -Ameya360 electronic components purchase network


EMF24T2R
1 (Unlimited)
NRND EMT6
Product description : TRANS NPN PREBIAS/NPN 0.15W EMT6
SPQ：8000
Datasheet : --
ECAD Model:

Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
Resistor - Base (R1) (Ohms)	10k
Power - Max	150mW
Resistor - Emitter Base (R2) (Ohms)	10k
Current - Collector (Ic) (Max)	100mA, 150mA
Category	Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max)	50V
Mounting Type	Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V / 180 @ 1mA, 6V
Categories	Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Frequency - Transition	250MHz, 180MHz
Package / Case	SOT-563, SOT-666
Transistor Type	1 NPN Pre-Biased, 1 NPN
Supplier Device Package	EMT6
Part Status	Not For New Designs
Manufacturer	Rohm Semiconductor
Family	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Current - Collector Cutoff (Max)	500nA
Packaging	Tape & Reel (TR)
Resistor - Base (R1)	10 kOhms

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