| BSM180D12P2C101 | ||
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| 产品描述：
MOSFET 2N-CH 1200V 180A MODULE
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| 标准包装：12 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Mounting Type | * |
|---|---|
| Family | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer | Rohm Semiconductor |
| Part Status | Active |
| Supplier Device Package | Module |
| Power - Max | 1130W |
| FET Feature | Silicon Carbide (SiC) |
| Input Capacitance (Ciss) @ Vds | 23000pF @ 10V |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Lead Free Status / RoHS Status | 1 |
| RoHS | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| FET Type | 2 N-Channel (Half Bridge) |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 180A |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Package / Case | Module |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Packaging | Bulk |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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