SCT2H12NZGC11 | ||
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产品描述:
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM
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标准包装:450 | ||
数据手册: |
Operating Temperature | 175°C (TJ) |
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FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 18V |
Supplier Device Package | TO-3PFM |
Power Dissipation (Max) | 35W (Tc) |
Technology | SiCFET (Silicon Carbide) |
Packaging | Tube |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Categories | Discrete Semiconductor Products |
Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V |
Mounting Type | Through Hole |
Vgs(th) (Max) @ Id | 4V @ 900µA |
Drain to Source Voltage (Vdss) | 1700V |
Package / Case | TO-3PFM, SC-93-3 |
Manufacturer | Rohm Semiconductor |
Part Status | Active |
Vgs (Max) | +22V, -6V |