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| 产品描述：
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM
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| 标准包装：1 | ||
| 数据手册： |
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| Operating Temperature | 175°C (TJ) |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 18V |
| Supplier Device Package | TO-3PFM |
| Power Dissipation (Max) | 35W (Tc) |
| Technology | SiCFET (Silicon Carbide) |
| Packaging | Tube |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Categories | Discrete Semiconductor Products |
| Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V |
| Mounting Type | Through Hole |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Drain to Source Voltage (Vdss) | 1700V |
| Package / Case | TO-3PFM, SC-93-3 |
| Manufacturer | Rohm Semiconductor |
| Part Status | Active |
| Vgs (Max) | +22V, -6V |
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