| DMG4N65CT | ||
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| 产品描述：
DMG4N65CT , N沟道 MOSFET 晶体管, 4 A, Vds=650 V, 3针 TO-220封装
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| 标准包装：50 | ||
| 数据手册： |
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| Package / Case | TO-220-3 |
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| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 900pF @ 25V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 2A, 10V |
| Power - Max | 2.19W |
| Supplier Device Package | TO-220-3 |
| Gate Charge (Qg) @ Vgs | 13.5nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
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