DMG6898LSD-13 | ||
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产品描述:
DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8
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标准包装:1 | ||
数据手册: |
Rds On - Drain-Source Resistance: | 11 mOhms, 11 mOhms |
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Product: | MOSFET Small Signal |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 500 mV, 500 mV |
Vgs - Gate-Source Voltage: | +/- 12 V, +/- 12 V |
Mounting Style: | SMD/SMT |
Fall Time: | 12.33 ns, 12.33 ns |
Manufacturer: | Diodes Incorporated |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 35.89 ns, 35.89 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 20 V, 20 V |
Transistor Type: | 2 N-Channel |
ECCN | EAR99 |
Packaging: | Reel |
Qg - Gate Charge: | 26 nC, 26 nC |
Pd - Power Dissipation: | 1.28 W |
Package / Case: | SO-8 |
Configuration: | 2 N-Channel |
Unit Weight: | 0.002610 oz |
Number of Channels: | 2 Channel |
Typical Turn-On Delay Time: | 11.67 ns, 11.67 ns |
Series: | DMG6898 |
Factory Pack Quantity: | 2500 |
Brand: | Diodes Incorporated |
RoHS: | Details |
Id - Continuous Drain Current: | 9.5 A, 9.5 A |
Rise Time: | 12.49 ns, 12.49 ns |
Maximum Operating Temperature: | + 150 C |
数据手册: |
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Supplier Stock
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
stock | 2500 | Update On 2025-05-07 |
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Lead-Time | -- | |
SPQ/MOQ | 1/1 | |
Location | -- | |
DateCode | -- |
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