DMG6898LSD-13
  • 量产中
  • EAR99
产品描述:
DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8
标准包装:1
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Rds On - Drain-Source Resistance: 11 mOhms, 11 mOhms
Product: MOSFET Small Signal
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 500 mV, 500 mV
Vgs - Gate-Source Voltage: +/- 12 V, +/- 12 V
Mounting Style: SMD/SMT
Fall Time: 12.33 ns, 12.33 ns
Manufacturer: Diodes Incorporated
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 35.89 ns, 35.89 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 20 V, 20 V
Transistor Type: 2 N-Channel
ECCN EAR99
Packaging: Reel
Qg - Gate Charge: 26 nC, 26 nC
Pd - Power Dissipation: 1.28 W
Package / Case: SO-8
Configuration: 2 N-Channel
Unit Weight: 0.002610 oz
Number of Channels: 2 Channel
Typical Turn-On Delay Time: 11.67 ns, 11.67 ns
Series: DMG6898
Factory Pack Quantity: 2500
Brand: Diodes Incorporated
RoHS:  Details
Id - Continuous Drain Current: 9.5 A, 9.5 A
Rise Time: 12.49 ns, 12.49 ns
Maximum Operating Temperature: + 150 C
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stock2500Update On
2025-05-07
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SPQ/MOQ1/1
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