IRL3103STRLPBF
  • ACTIVE
  • EAR99
Product description : Single N-Channel 30 V 12 mOhm 33 nC HEXFET® Power Mosfet - D2PAK
SPQ:1
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Packaging: Reel
Qg - Gate Charge: 22 nC
Pd - Power Dissipation: 110 W
Package / Case: TO-252-3
Vgs - Gate-Source Voltage: 16 V
Mounting Style: SMD/SMT
Fall Time: 9.1 ns
Manufacturer: Infineon
Factory Pack Quantity: 800
Brand: Infineon / IR
RoHS:  Details
Id - Continuous Drain Current: 64 A
Rise Time: 120 ns
Type: HEXFET Power MOSFET
ECCN EAR99
Rds On - Drain-Source Resistance: 16 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Configuration: Single
Unit Weight: 0.139332 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 8.9 ns
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 14 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 30 V
Transistor Type: 1 N-Channel
Maximum Operating Temperature: + 175 C
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Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$0.79593

6.61071

800+$0.79593
1600+$0.72726
stock3200Update On
2022-12-17
Lead-Time0Weeks
Supplier SPQ/MOQ1/800
Location--
DateCode2023

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