IXFN180N25T specifications -Ameya360 electronic components purchase network


IXFN180N25T

ACTIVE EAR99
Product description : N-Channel 250 V 12.9 mOhm Power MosFet Surface Mount -SOT-227B
SPQ：10
Datasheet : IXFN180N25T.pdf

Width:	25.42 mm
Rds On - Drain-Source Resistance:	12.9 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	SOT-227-4
Height:	12.22 mm
Unit Weight:	1.340411 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	37 ns
Forward Transconductance - Min:	100 S
Series:	IXFN180N25
Factory Pack Quantity:	10
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	155 A
Rise Time:	33 ns
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	345 nC
Pd - Power Dissipation:	900 W
Tradename:	GigaMOS
Vgs th - Gate-Source Threshold Voltage:	5 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	28 ns
Length:	38.23 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	100 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	250 V
Type:	GigaMOS Power MOSFET
Maximum Operating Temperature:	+ 150 C

Datasheet： IXFN180N25T.pdf

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Stock code :	561649
Mfg name :	IXYS Corporation
MPN :	IXFN180N25T
Product description :	N-Channel 250 V 12.9 mOhm Power MosFet Surface Mount -SOT-227B

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