BSM080D12P2C008
  • 1 (Unlimited)
  • NEW
  • Module
  • EAR99
Product description : SIC POWER MODULE-1200V-80A
SPQ:12
Datasheet :
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Vgs th - Gate-Source Threshold Voltage 1.6 V
Number of Channels 2 Channel
Configuration Half-Bridge
Minimum Operating Temperature - 40 C
Type SiC Power Module
Product Power Semiconductor Modules
MSL 1 (Unlimited)
Operating Temperature 175°C (TJ)
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays
Mounting Type Chassis Mount
Vgs(th) (Max) @ Id 4V @ 13.2mA
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Power - Max 600W
Lead Free Status / RoHS Status 1
RoHS Lead free / RoHS Compliant
Vds - Drain-Source Breakdown Voltage 1200 V
Pd - Power Dissipation 600 W
Maximum Operating Temperature + 150 C
Mounting Style Screw
Vgs - Gate-Source Voltage - 6 V, + 22 V
Id - Continuous Drain Current 80 A
ECCN EAR99
FET Feature Silicon Carbide (SiC)
FET Type 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Supplier Device Package Module
Package / Case Module
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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