RT1A050ZPTR
  • 1 (Unlimited)
  • 不建议用于新设计
  • 8-SMD, Flat Lead
产品描述:
MOSFET P-CH 12V 5A TSST8
标准包装:3000
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Packaging: Reel
Product: MOSFET Small Signal
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 0.8 mm
Vgs - Gate-Source Voltage: 10 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 12 ns
Manufacturer: ROHM Semiconductor
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 410 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 12 V
Transistor Type: 1 P-Channel
Operating Temperature 150°C (TJ)
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 6V
Vgs(th) (Max) @ Id 1V @ 1mA
Drain to Source Voltage (Vdss) 12V
Package / Case 8-SMD, Flat Lead
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Width: 1.6 mm
Rds On - Drain-Source Resistance: 26 mOhms
Pd - Power Dissipation: 1.25 W
Package / Case: TSST-8
Configuration: Single Hex Drain
Mounting Style: SMD/SMT
Fall Time: 220 ns
Length: 3 mm
Series: RT1A050ZP
Factory Pack Quantity: 3000
Brand: ROHM Semiconductor
RoHS:  Details
Id - Continuous Drain Current: 5 A
Rise Time: 95 ns
Maximum Operating Temperature: + 150 C
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 26 mOhm @ 5A, 4.5V
Supplier Device Package 8-TSST
Power Dissipation (Max) 600mW (Ta)
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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