RT1A050ZPTR | ||
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产品描述:
MOSFET P-CH 12V 5A TSST8
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标准包装:3000 | ||
数据手册: |
Packaging: | Reel |
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Product: | MOSFET Small Signal |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Height: | 0.8 mm |
Vgs - Gate-Source Voltage: | 10 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 12 ns |
Manufacturer: | ROHM Semiconductor |
Transistor Polarity: | P-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 410 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | - 12 V |
Transistor Type: | 1 P-Channel |
Operating Temperature | 150°C (TJ) |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 6V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Drain to Source Voltage (Vdss) | 12V |
Package / Case | 8-SMD, Flat Lead |
Vgs (Max) | ±10V |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Width: | 1.6 mm |
Rds On - Drain-Source Resistance: | 26 mOhms |
Pd - Power Dissipation: | 1.25 W |
Package / Case: | TSST-8 |
Configuration: | Single Hex Drain |
Mounting Style: | SMD/SMT |
Fall Time: | 220 ns |
Length: | 3 mm |
Series: | RT1A050ZP |
Factory Pack Quantity: | 3000 |
Brand: | ROHM Semiconductor |
RoHS: | Details |
Id - Continuous Drain Current: | 5 A |
Rise Time: | 95 ns |
Maximum Operating Temperature: | + 150 C |
Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 5A, 4.5V |
Supplier Device Package | 8-TSST |
Power Dissipation (Max) | 600mW (Ta) |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
Lead Free Status / RoHS Status | 1 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
数据手册: |
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