SI9926CDY-T1-GE3
SI9926CDY-T1-GE3
  • 量产中
产品描述:
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8
标准包装:1
数据手册: --
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
安装类型 表面贴装
FET 类型 2 个 N 沟道(双)
不同 Id 时的 Vgs(th)(最大值) 1.5V @ 250µA
不同 Vgs 时的栅极电荷(Qg) 33nC @ 10V
电流 - 连续漏极(Id)(25°C 时) 8A
漏源极电压(Vdss) 20V
封装/外壳 8-SOIC(0.154",3.90mm 宽)
FET 功能 逻辑电平门
供应商器件封装 8-SO
不同 Id,Vgs 时的 Rds On(最大值) 18 毫欧 @ 8.3A,4.5V
不同 Vds 时的输入电容(Ciss) 1200pF @ 10V
功率 - 最大值 3.1W
登录之后就可发表评论

Consignment Stock

The stock show from Manufacture or Manufacture Authorized Distributor Online stock QTY.

stock70097Update On
2025-04-10
Lead-Time--
SPQ/MOQ1/1
Location--
DateCode--

Supplier Stock

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock2500Update On
2025-04-08
Lead-Time--
SPQ/MOQ1/1
Location--
DateCode--

Supplier Code:SP1041

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock2500Update On
2025-04-11
Lead-Time10个工作日
Supplier SPQ/MOQ2500/2500
Location--
DateCode23+

请输入下方图片中的验证码:

验证码