SI3460DDV-T1-GE3
SI3460DDV-T1-GE3
  • 量产中
产品描述:
N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
标准包装:1
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安装类型 表面贴装
FET 类型 MOSFET N 通道,金属氧化物
不同 Id 时的 Vgs(th)(最大值) 1V @ 250µA
不同 Vgs 时的栅极电荷(Qg) 18nC @ 8V
电流 - 连续漏极(Id)(25°C 时) 7.9A(Tc)
漏源极电压(Vdss) 20V
封装/外壳 SOT-23-6 细型,TSOT-23-6
FET 功能 逻辑电平门
供应商器件封装 6-TSOP
不同 Id,Vgs 时的 Rds On(最大值) 28 毫欧 @ 5.1A,4.5V
不同 Vds 时的输入电容(Ciss) 666pF @ 10V
功率 - 最大值 2.7W
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2025-04-16
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2025-04-10
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