BSS138WH6327XTSA1
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
标准包装:1
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Packaging: Reel
Qg - Gate Charge: 1 nC
Pd - Power Dissipation: 500 mW
Package / Case: SOT-323-3
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 8.2 ns
Forward Transconductance - Min: 0.12 S
Series: BSS138
Factory Pack Quantity: 3000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 6.7 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 60 V
Transistor Type: 1 N-Channel
ECCN EAR99
Rds On - Drain-Source Resistance: 3.5 Ohms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 1.4 V
Unit Weight: 0.004395 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 2.2 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: BSS138W BSS138WH6327XT H6327 SP000924068
RoHS:  Details
Id - Continuous Drain Current: 280 mA
Rise Time: 3 ns
Maximum Operating Temperature: + 150 C
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