| 2N7002DWH6327XTSA1 | ||
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| 产品描述：
Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS™ Small Signal Mosfet - SOT-363
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Packaging: | Reel |
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| Qg - Gate Charge: | 400 pC |
| Pd - Power Dissipation: | 500 mW |
| Package / Case: | SOT-363-6 |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Fall Time: | 3.1 ns |
| Forward Transconductance - Min: | 11 S |
| Series: | 2N7002 |
| Factory Pack Quantity: | 3000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 5.5 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V, 60 V |
| Transistor Type: | 2 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 3 Ohms, 3 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 3 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | 2N7002DW 2N7002DWH6327XT H6327 SP000917596 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 300 mA, 300 mA |
| Rise Time: | 3.3 ns |
| Maximum Operating Temperature: | + 150 C |
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