ROHM SiC Power MOSFETs

Release time:2019-09-17
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source:ROHM Semiconductor
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SiC Power MOSFETs

ROHM’s SiC MOSFETs feature low ON resistance and low switching loss


ROHM’s silicon carbide (SiC) MOSFETs are available in a range of current ratings and packages. They come in a variety of ON resistances and voltage (VDSS) ratings of 650 V, 1,200 V, or 1,700 V. Unlike IGBTs there is no tail current during turn-off resulting in faster operation and reduced switching loss. Also, unlike silicon devices, the ON resistance remains relatively constant even at high temperatures, minimizing conduction losses. Both 2nd generation planar with maximum short-circuit withstand time and 3rd generation trench with reduced input capacitance and lower gate charge models are offered. Bare dies up to 1,700 V are also available.


Features

  • Fast switching with low loss

  • Maximum junction temperature: +175°C

  • Packaged devices rated at 650 V, 1,200 V, or 1,700 V

  • ON resistance from 17 mΩ to 1,150 mΩ

  • Spice model and thermal model available

  • 2nd gen planar technology with longer short-circuit withstand time

  • No limitations on the use of the body diode

  • 3rd gen trench technology with low input capacitance (CISS) and low gate charge (QG)

  • DC blocking voltage: 650 V, 1,200 V, 1,700 V

  • Minimal switching losses

  • Operating temperature range: -40°C to +175°C

Applications

  • Inverters for induction heating

  • Motor drive inverters

  • Bidirectional converters

  • Solar inverters

  • Power conditioners



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    SiC Power MOSFETs Arrays

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