| QS6K1TR | ||
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| 产品描述：
N-Channel + N-Channel 1.25 W 30 V 364 mOhm 2.4 nC SMT 2.5 V Drive MosFet -TSMT-6
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| 标准包装：3000 | ||
| 数据手册： |
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| Packaging: | Reel |
|---|---|
| Product: | MOSFET Small Signal |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 0.85 mm |
| Vgs - Gate-Source Voltage: | 12 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 7 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 15 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Type: | MOSFET |
| Maximum Operating Temperature: | + 150 C |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
| Rds On (Max) @ Id, Vgs | 238 mOhm @ 1A, 4.5V |
| Supplier Device Package | TSMT6 (SC-95) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Manufacturer | Rohm Semiconductor |
| Part Status | Active |
| Base Part Number | *K1 |
| Lead Free Status / RoHS Status | 1 |
| RoHS | Lead free / RoHS Compliant |
| Width: | 1.6 mm |
| Rds On - Drain-Source Resistance: | 260 mOhms |
| Pd - Power Dissipation: | 1.25 W |
| Package / Case: | TSMT-6 |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Fall Time: | 7 ns |
| Length: | 2.9 mm |
| Series: | QS6K1 |
| Factory Pack Quantity: | 3000 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 1 A |
| Rise Time: | 7 ns |
| Transistor Type: | 2 N-Channel |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Input Capacitance (Ciss) (Max) @ Vds | 77pF @ 10V |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 1.25W |
| Packaging | Tape & Reel (TR) |
| Current - Continuous Drain (Id) @ 25°C | 1A |
| ECCN | EAR99 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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