RHU002N06T106
  • 1 (Unlimited)
  • 不建议用于新设计
  • SC-70, SOT-323
  • EAR99
产品描述:
N-Channel 200 mW 60 V 2.4 Ohm Surface Mount Small Signal MosFet - UMT-3
标准包装:1
数据手册: --
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Packaging: Reel
Product: MOSFET Small Signal
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 0.8 mm
Vgs - Gate-Source Voltage: 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 15 ns
Manufacturer: ROHM Semiconductor
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 4 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 60 V
Type: MOSFET
Maximum Operating Temperature: + 150 C
Operating Temperature 150°C (TJ)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 10V
Supplier Device Package UMT3
Power Dissipation (Max) 200mW (Ta)
Packaging Tape & Reel (TR)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Width: 1.25 mm
Rds On - Drain-Source Resistance: 2.8 Ohms
Pd - Power Dissipation: 200 mW
Package / Case: UMT-3
Configuration: Single
Mounting Style: SMD/SMT
Fall Time: 8 ns
Length: 2 mm
Series: RHU002N06
Factory Pack Quantity: 3000
Brand: ROHM Semiconductor
RoHS:  Details
Id - Continuous Drain Current: 200 mA
Rise Time: 8 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.4 Ohm @ 200mA, 10V
Drain to Source Voltage (Vdss) 60V
Package / Case SC-70, SOT-323
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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