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| 产品描述：
Single N-Channel 30V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
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| 标准包装：1 | ||
| 数据手册： |
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| Power - Max | 2.5W |
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| Rds On (Max) @ Id, Vgs | 4 mOhm @ 20A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 2.32V @ 250µA |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| FET Feature | Standard |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) @ Vgs | 51nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 4310pF @ 15V |
| ECCN | EAR99 |
| 数据手册： |
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