| SIR416DP-T1-GE3 | ||
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| 产品描述：
N-Channel 40 V 3.8 mΩ 90 nC SMT TrenchFET Power Mosfet - PowerPAK SO-8
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| 标准包装：3000 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 5.2 W |
| Tradename: | TrenchFET |
| Height: | 1.04 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 40 ns |
| Length: | 4.9 mm |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SIR416DP-GE3 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 50 A |
| Rise Time: | 85 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 3.1 mOhms |
| Width: | 5.89 mm |
| Technology: | Si |
| Package / Case: | SOIC-8 |
| Configuration: | Single |
| Unit Weight: | 0.017870 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 28 ns |
| Forward Transconductance - Min: | 96 S |
| Series: | SIR |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Typical Turn-Off Delay Time: | 42 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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