SIRA06DP-T1-GE3 | ||
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产品描述:
N-CH 30V 40A 2,05mOhm PPAK SO-8 RoHSconf
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标准包装:1 | ||
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Power - Max | 62.5W |
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Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 15A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Part Status | Active |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Packaging | Cut Tape (CT) |
Package / Case | PowerPAK® SO-8 |
FET Feature | Standard |
Supplier Device Package | PowerPAK® SO-8 |
Gate Charge (Qg) @ Vgs | 77nC @ 10V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 3595pF @ 15V |
ECCN | EAR99 |
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