| -Collector- Base Voltage VCBO: |
60 V |
| -Collector-Emitter Saturation Voltage: |
0.3 V |
| -Pd - Power Dissipation: |
150 mW |
| -Height: |
0.7 mm |
| -Configuration: |
Single |
| -Emitter- Base Voltage VEBO: |
12 V |
| -DC Current Gain hFE Max: |
2700 |
| -Length: |
1.6 mm |
| -Manufacturer: |
ROHM Semiconductor |
| -Transistor Polarity: |
NPN |
| -Brand: |
ROHM Semiconductor |
| -Product Category: |
Bipolar Transistors - BJT |
| -Maximum Operating Temperature: |
+ 150 C |
| -Width: |
0.8 mm |
| -Packaging: |
Reel |
| -Package / Case: |
VMT-3 |
| -Gain Bandwidth Product fT: |
250 MHz |
| -Mounting Style: |
SMD/SMT |
| -Maximum DC Collector Current: |
0.15 A |
| -Continuous Collector Current: |
0.15 A |
| -DC Collector/Base Gain hfe Min: |
820 |
| -Series: |
2SD2707 |
| -Factory Pack Quantity: |
8000 |
| -RoHS: |
Details |
| -Collector- Emitter Voltage VCEO Max: |
50 V |
| -ECCN |
EAR99 |
