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RGTH00TS65GC11

IGBT 650V 85A 277W TO-247N

Manufacturer ROHM Semiconductor
MPN RGTH00TS65GC11
SPQ 1
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet RGTH00TS65GC11.pdf

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Product parameter

-Current - Collector Pulsed (Icm) 200A
-Power - Max 277W
-IGBT Type Trench Field Stop
-Td (on/off) @ 25°C 39ns/143ns
-Part Status Active
-Manufacturer Rohm Semiconductor
-Voltage - Collector Emitter Breakdown (Max) 650V
-Mounting Type Through Hole
-Input Type Standard
-Operating Temperature -40°C ~ 175°C (TJ)
-Lead Free Status / RoHS Status 1
-RoHS Lead free / RoHS Compliant
-Package / Case TO-247-3
-Test Condition 400V, 50A, 10 Ohm, 15V
-Supplier Device Package TO-247N
-Current - Collector (Ic) (Max) 85A
-Category Discrete Semiconductor Products
-Gate Charge 94nC
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
-Packaging Tube
-Categories Discrete Semiconductor Products -> Transistors - IGBTs - Single
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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