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RGT30NS65DGTL

IGBT 650V 30A 133W TO-263S

制造商 ROHM Semiconductor
制造商零件编号 RGT30NS65DGTL
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 RGT30NS65DGTL.pdf RGT30NS65DGTL.pdf RGT30NS65DGTL.pdf
SP1000库存
美元价格 $1.911
人民币价格 ¥15.87209
库存类型 SP1000
库存数量 895
阶梯价格
数量 价格
1+ $1.911
10+ $1.7248
25+ $1.6268
100+ $1.3916
250+ $1.3426
500+ $1.1368
1000+ $0.9408

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产品参数

-Current - Collector Pulsed (Icm) 45A
-Power - Max 133W
-IGBT Type Trench Field Stop
-Td (on/off) @ 25°C 18ns/64ns
-Part Status Active
-Manufacturer Rohm Semiconductor
-Gate Charge 32nC
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
-Operating Temperature -40°C ~ 175°C (TJ)
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Test Condition 400V, 15A, 10 Ohm, 15V
-Supplier Device Package LPDS (TO-263S)
-Current - Collector (Ic) (Max) 30A
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 55ns
-Voltage - Collector Emitter Breakdown (Max) 650V
-Mounting Type Surface Mount
-Input Type Standard
-Lead Free Status / RoHS Status 1

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