BIWIN's
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BIWIN's "Integrated R&D and Packaging 2.0 Strategy"

　　The Third GMIF2024 Innovation Summit was successfully held on September 27, 2024 at Renaissance Shenzhen Bay Hotel. The event brought together senior executives and industry experts from renowned domestic and international companies, including the School of Integrated Circuits at Peking University, Micron, Western Digital, Solidigm, Arm, UNISOC, Intel, iFlytek, Rockchip, Silicon Motion, BIWIN, Victory Giant, Allwinner, InnoGrit, Maxio, QUANXING, Montage, Applied Materials (AMAT), Lam Research, DISCO, Skyverse, Loongson Technology, and many others. The gathering saw industry leaders engage in discussions on global storage innovation and ecosystem collaboration for shared growth in the AI era. During the summit, the GMIF2024 Annual Awards were officially unveiled, and a total of 38 key enterprises from across the industry supply chain had been honored for their outstanding contributions.　　At the GMIF2024 Innovation Summit, Sam Sun, Chairman of BIWIN Storage, delivered a keynote speech titled "Integrated R&D and Packaging 2.0 Strategy: Full Industry Chain Layout Empowering Client Value Elevation". In the keynote, Mr. Sun shared BIWIN's latest strategic initiatives, technological breakthroughs, and future development over the past year. Supported by continued investment and efforts in integrated R&D and packaging, BIWIN Storage is leveraging advanced technology and full-chain collaboration to empower customers to achieve greater value and drive industry progress.　　From Brand Upgrade to Global Market Expansion: Innovation-Driven and Sustained Growth　　Mr. Sun first and foremost highlighted BIWIN’s significant initiative in brand upgrade in 2024. A new logo and brand slogan were unveiled: 'Infinite Storage, Unlimited Solutions'. More than a transformation of its brand image, this upgradation is an emblem to BIWIN's ongoing strategic, technological and market expansion and the demonstration of its vision to achieve continuous growth in the global storage field.　　In the global market, BIWIN Storage achieved remarkable results in the first half of 2024, thanks to precise market positioning and efficient localized delivery. Its revenue surpassed 3.4 billion RMB, marking an almost 200% increase year-on-year. This growth reflects the successful implementation of the company's global expansion and localized operation strategies.　　Integrated R&D and Packaging 2.0 Strategy: Building Core Competence to Drive Technological Advancement　　BIWIN's "Integrated R&D and Packaging 2.0 Strategy" is regarded as a crucial initiative in its technological innovation and full-chain layout. Mr. Sun further elucidated BIWIN's investments in solutions, chip design, packaging and testing, and equipment development, and shared that with concentration on independent R&D and partnerships, BIWIN has now accumulated core strengths in these areas, and been capable of offering customers more high-efficiency and low-power solutions.　　BIWIN's latest strategy not only involves a keen focus on the R&D and packaging and testing of mainstream memory, but shifts attention to more far-reaching development opportunities in high-end advanced packaging and testing technology. Powered by its dual-drive strategy, BIWIN is dedicated to further enhancing its competitiveness in the storage industry, and providing customers with innovative and cost-effective solutions.　　Strategic Advanced Packaging and Testing Layout: Overcoming Industry Bottlenecks to Secure Future Advantages　　In the face of the increasing technological demands and market challenges in the storage industry, BIWIN Storage is actively promoting its full-chain layout. Mr. Sun noted that, in addition to focusing on storage solution R&D, the company has also been a pioneer in establishing storage packaging capabilities in South China. By advancing its wafer-level packaging and testing layout, BIWIN has positioned itself as one of the few semiconductor storage companies capable of offering advanced packaging services.　　With the adoption of cutting-edge technologies such as 3D/2.5D packaging, BIWIN Storage is able to deliver top-notch services to customers in reducing product power consumption, improving performance, and offering customized packaging and testing services for areas such as computing power. Mr. Sun emphasized that advanced packaging and testing is not only the consequence driven by market demand but is also the inevitable direction of future industry development. This layout will further solidify BIWIN Storage's leadership in the storage industry.　　To accelerate the implementation of advanced packaging and testing, BIWIN Storage has chosen to establish an advanced packaging and testing factory in the Greater Bay Area. As a core hub of China's high-tech industry, the Greater Bay Area houses numerous IC design companies and innovative enterprises. However, there are still significant gaps in the packaging and testing field. BIWIN's advanced packaging and testing layout fills this gap and promotes the coordinated development of the entire industry chain.　　Mr. Sun expressed that BIWIN Storage plans to launch its new plant in 2025 to provide more efficient and flexible packaging and testing services for customers in areas such as computing power. This layout will not only strengthen the company's competitiveness in the storage market but also inject new vitality into the Greater Bay Area's innovation ecosystem.　　Integrated R&D and Packaging 2.0 Strategy: Building Core Advantages to Strengthen Customer Loyalty　　In the summary of the "Integrated R&D and Packaging 2.0 Strategy", Sam Sun emphasized that the core of this strategy lies in enhancing BIWIN's core competitiveness in the storage industry through technological innovation and full-chain collaboration, while establishing closer partnerships with clients. The main advantages of this strategy are reflected in the following four aspects:　　01 Expanding Industry Coverage　　The Strategy contributes to enhancing collaboration with upstream wafer fabs to maintain control over R&D, manufacturing, and mass production, while serving a wider range of customers and expanding the industry chain through the application of advanced packaging and testing technologies.　　02 Enhancing Technological Barriers　　The Strategy contributes to strengthening technological innovation by increasing R&D investment, and participating in more high-end application scenarios, so as to gain a unique market advantage and secure a technological edge in the competitive landscape.　　03 Driving Innovation and Differentiation　　The Strategy contributes to offering products with higher bandwidth, lower power consumption to the market by developing differentiated solutions, more complex packaging processes, and advanced memory architectures, showcasing BIWIN's technological strength in the industry.　　04 Strengthening Customer Loyalty and Trust　　The Strategy contributes to providing high-quality and customized solutions, along with comprehensive technical and service support, to strengthen customer relationships and trust and achieve mutual success through deep collaboration with customers.　　Looking Ahead: Focusing on Dual-Drive Strategy to Elevate Customer Value　　In the end, Mr. Sun concluded BIWIN Storage's vision with the phrase "BIWIN, WIN-WIN". He emphasized that BIWIN Storage will continue its dual-drive strategy of storage and advanced packaging and testing to join hands with customers to seize future opportunities in the storage industry. BIWIN Storage aims to be more than just a storage product provider — it strives to be a trusted all-around partner, driving technological innovation and commercial success together with its customers.
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Release time：2024-11-08 13:45 reading：237 Continue reading>>
GigaDevice GD32F30x Software Test Library (STL) Achieves TÜV Rheinland IEC 61508 Functional Safety Certification
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GigaDevice GD32F30x Software Test Library (STL) Achieves TÜV Rheinland IEC 61508 Functional Safety Certification

　　GigaDevice, a leading semiconductor company specializing in Flash Memory, 32-bit Microcontrollers (MCUs), Sensors, and Power Management technologies announced that its GD32F30x Software Test Library (STL) has received IEC 61508 SC3 (SIL 2/SIL 3) functional safety certification from TÜV Rheinland. This certification follows the earlier certification of the GD32H7 Software Test Library (STL), demonstrating that GigaDevice has established a comprehensive presence in the field of functional safety. The company now offers software test libraries for both high-performance Arm® Cortex®-M7 core MCUs and mainstream Arm® Cortex®-M4 core MCUs, providing users with a broader range of product options for industrial applications. These achievements highlight GigaDevice’s commitment to product safety and reliability, as well as its expertise and advancements in the field of functional safety.　　The GD32F30x STL software test library is designed to ensure the safe operation of the GD32F30x series MCUs. It monitors the status of core units such as the internal CPU/DPU, FPU, and MPU, and conducts regular checks on memory like SRAM and Flash to quickly identify random hardware faults. Upon detecting a fault, the GD32F30x Software Test Library (STL) immediately triggers a preset safety response mechanism, placing the MCU in a safe state, thereby mitigating potential risks and providing users with time to address and rectify system failures. Additionally, it offers comprehensive documentation, including FMEDA and safety manuals, to ensure that the product meets specific safety requirements throughout the design, development, and production processes.　　Vincent Li, GigaDevice CTO and General Manager of MCU BU, stated: "As industrial automation and intelligence continue to evolve, the importance of functional safety becomes increasingly evident. The consecutive IEC 61508 SC3 (SIL 2/SIL 3) functional safety certifications for the GD32H7 STL and GD32F30x STL demonstrate that GigaDevice has established a mature management system in the functional safety field. This is crucial for enhancing the overall competitiveness of our GD32 MCU products and enabling users to develop products that meet functional safety standards in a shorter timeframe. Meanwhile, the certification process for the GD32 MCU software test library based on the Arm® Cortex® M33 core is also progressing concurrently. We will continue to align with international standards and drive technological advancements and product upgrades.”　　Bin Zhao, General Manager Cybersecurity & Functional Safety Greater China of TÜV Rheinland stated: Congratulations to GigaDevice for once again obtaining TÜV Rheinland's STL functional safety certification! GigaDevice's steadfast commitment to functional safety reflects its dedication to stringent safety standards, which we highly commend. In the future, we will continue to uphold professional technical requirements, adhere to rigorous certification processes, and deepen our collaboration to support GigaDevice in achieving further breakthroughs in the field of functional safety.”　　About GigaDevice　　GigaDevice Semiconductor Inc. (SSE Stock Code 603986) is a global leading fabless supplier. The company was founded in April 2005 and headquartered in Beijing, China, with branch offices in many countries and regions worldwide, providing local support at customers' fingertips. Committed to building a complete ecosystem with four major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety production certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management.
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Release time：2024-11-07 14:00 reading：259 Continue reading>>
NOVOSENSE Launches Automotive-Grade High-Side Switches for Body Control Modules and Zone Control Units
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NOVOSENSE Launches Automotive-Grade High-Side Switches for Body Control Modules and Zone Control Units

　　NOVOSENSE Microelectronics, a semiconductor company specializing in high-performance analog and mixed-signal chips, has announced a range of high-side switches for driving traditional resistive, inductive, and halogen lamp loads in automotive body control modules (BCM) as well as large capacitive loads commonly found in the first-level and second-level power distribution within zone control units (ZCU).　　At time of launch, the NSE34 and NSE35 families includes 26 single-, dual- and quad-channel devices developed for operation across 11 separate load currents intervals (11 A to sub-2 A). These devices have an Rds(on) resistance range from 8 mΩ to 140 mΩ and feature industry-leading load-driving capabilities and advanced diagnostic and protection functions such as advanced over-current protection and over-voltage clamping protection.　　All devices in the two families are fully compliant with multiple automotive standards, including AEC-Q100, AEC-Q100-006, AEC-Q100-012 Grade A, ISO7637, ISO16570 and CISPR25-2021 Class 5.　　Yang WANG, Product Line Marketing Director of NOVOSENSE said: “For electric and autonomous vehicles, body domain controllers have become increasingly important, enabling smart power distribution and functional integration. Indeed, they are essential for many applications, whether in resistive loads such as a seat heater, capacitive or halogen lamp loads for surge-current handling, or inductive loads such as in wipers, solenoids and relays, where it protects against negative voltage spikes.”　　The NSE34 and NSE35 families of high-side switches are available in 14- and 16-pin HSSOP packages measuring 4.9mm x 3.9mm respectively.
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Release time：2024-11-06 14:11 reading：276 Continue reading>>
ROHM at electronica 2024: Empowering Growth, Inspiring Innovation
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ROHM at electronica 2024: Empowering Growth, Inspiring Innovation

　　Willich/Munich, Germany, October 10th, 2024 – ROHM Semiconductor Europe is looking forward to electronica 2024 – the world’s leading trade fair and conference for electronic components, systems, applications, and solutions. The event will take place between November 12th to 15th in Munich.　　At booth C3-520, ROHM will showcase its advanced power and analog technologies designed to enhance power density, efficiency, and reliability in both automotive and industrial applications. These advancements are crucial for addressing the increasing demands of modern electronic systems, particularly in the context of sustainability and innovation.　　Under the theme "Empowering Growth, Inspiring Innovation," ROHM will highlight via its various demo application stations in “tree style” how its high-quality semiconductor technologies contribute to solving critical social and ecological challenges. The focus will be on driving sustainability in electronic design and innovation, which aligns with the growing emphasis on creating environmentally responsible solutions within the industry.　　At electronica 2024, the exhibition space has been greatly expanded and the number of items on display has been increased to 30 – more than three times compared to the previous show.　　The latest solutions will be exhibited under the three themes of “for E-Mobility”, “for Automotive”, and “for Industrial”.　　For E-Mobility　　・TRCDRIVE pack™ with 2-in-1 SiC Molded Module to improve the efficiency of traction inverters　　・New EcoIGBT™ products for electric compressors　　・New EcoSiC™ Schottky Barrier Diodes for onboard chargers　　For Automotive　　・New configurable PMIC with supporting functional safety features for application processors, SoCs and FPGAs　　・LED Driver ICs for Exterior Lighting / Head Lamps　　・Advanced solutions on the ADAS cockpit demo　　For Industrial Equipment　　・Industrial AC-DC PWM Controller ICs – support a wide range of power transistors from Si MOSFETs and IGBTs to SiC MOSFETs　　・The EcoGaN™ family of 150V and 650V class GaN HEMTs in several EVKs　　・Latest R&D project on Terahertz　　In addition to product showcases, ROHM is committed to fostering technical exchange and collaboration at electronica 2024. "For us, electronica is more than just a showcase – it’s an opportunity to forge new connections, strengthen existing partnerships, and reunite with industry peers," says Wolfram Harnack, President of ROHM Semiconductor Europe. "We are excited to welcome our guests to Munich as we work together to shape the future of electronics."　　For a sneak peek at which highlights ROHM will present during electronica 2024, visit our event preview page: https://www.rohm.com/electronica　　TRCDRIVE pack™, EcoIGBT™, EcoSiC™ and EcoGaN™ are trademarks or registered trademarks of ROHM Co., Ltd.
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Release time：2024-11-05 15:56 reading：259 Continue reading>>
Murata’s Type 1SC-NTN module achieves Skylo U.S. certification for cellular and non-terrestrial network connectivity
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Murata’s Type 1SC-NTN module achieves Skylo U.S. certification for cellular and non-terrestrial network connectivity

　　Murata announced today that its Type 1SC-NTN has received Skylo U.S. certification for its dual-mode cellular and non-terrestrial network (NTN) capabilities, making it the first ultra-compact resin mold module to achieve this recognition from an NTN service provider. The product seamlessly integrates the latest Rel-17 NTN standard, enabling satellite data communication capabilities without necessitating any hardware design changes. When paired with Skylo's NTN service, it extends the reach of satellite connectivity, ensures uninterrupted communication, and delivers a new class of solution for the demanding satellite IoT market.　　Murata’s Type 1SC is the world’s smallest form factor LTE Cat M/NB-IoT module with both global regulatory and NTN certification. It supports GPS/GNSS, OpenMCU, and Integrated SIM to support the applications that are defining today’s market, such as dual-mode cellular IoT. In addition to its unmatched size, low power, and cost-efficiency, its high level of integration accelerates time to market while lowering development and deployment costs for customers. Target uses include wearable, tracking, and medical monitoring devices, as well as M2M communication, smart meters, and other size-limited IoT edge products.
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Release time：2024-10-15 13:19 reading：238 Continue reading>>
ROHM’s New PWM Controller ICs with SOP Package for Power Supply in a Wide Variety of Industrial Applications
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ROHM’s New PWM Controller ICs with SOP Package for Power Supply in a Wide Variety of Industrial Applications

　　ROHM has developed external FET-type controller ICs utilizing PWM current control mode optimized for AC-DC power supply in various industrial applications. Mass production has begun for four variants designed to drive a wide range of power semiconductors: the BD28C55FJ-LB for low-voltage MOSFETs, BD28C54FJ-LB for medium- to high-voltage MOSFETs, BD28C57LFJ-LB for IGBTs, and BD28C57HFJ-LB for SiC MOSFETs.　　Although the global semiconductor shortage is beginning to ease, the supply of semiconductor components for power supplies in industrial applications continues to lag behind demand. This is particularly true for PWM controller ICs, where the limited number of manufacturers has resulted in chronic shortages, leading to numerous requests for product development.　　In response, ROHM has developed PWM controller ICs that address the ongoing supply issue by meeting the industrial market’s stringent package and performance requirements. Depending upon the input AC voltage range of the application, a wide variety of semiconductors are used for power supply circuit. Each of these semiconductors demand different undervoltage lock out levels to prevent thermal runaway in case of supply/gate voltage drop. To solve this issue, ROHM has developed 4 variants with different undervoltage lock out levels.　　The new products feature an input voltage range of 6.9V to 28.0V, circuit current up to 2.0mA, maximum startup current of 75µA, and a maximum duty cycle of 50%, offered in the standard SOP-J8 package (equivalent to the JEDEC SOIC8). The products are pin to pin compatible to standard products commonly used in power supply circuits, thus reducing re-design and modification efforts. All variants are equipped with a self-recovery-type undervoltage lockout function (UVLO) with voltage hysteresis. This significantly improves application reliability by reducing the threshold voltage error to ±5%, compared to the typical ±10% of standard products.　　At the same time, these ICs are designated for long-term supply, thus ensuring continuous operation of long-life industrial equipment. Going forward, the lineup will be further expanded to include products suitable to drive high-voltage MOSFETs and GaN devices. More variants to support a maximum duty cycle of 100% are also being planned.　　Application ExamplesIndustrial equipment: AC-DC power supplies, motor drive inverters, and other AC-powered devices　　Product Information　　Applicable Part Nos: BD28C54FJ-LB, BD28C55FJ-LB, BD28C57HFJ-LB, BD28C57LFJ-LB　　TerminologyPWM Control Type　　Short for Pulse Width Modulation, a method for controlling power using semiconductors. The output power is controlled by varying the ratio of ON and OFF times within a fixed cycle.　　Duty Cycle　　The proportion of ON and OFF times as percentage of the switching period is known as ON- and OFF-duty cycle, respectively. It is common to refer to the ON-time ratio as the duty cycle. Duty Cycle (%) = Pulse Width (t) / Period (T).　　Self-Recovery Undervoltage Lockout Function (UVLO) with Voltage Hysteresis　　This function safety stops IC operation before the circuit inside the IC becomes abnormal when the input voltage drops below a threshold. For self-recovery types, the IC can become unstable by repeatedly stopping and starting near the threshold voltage, so a protection circuit with hysteresis is used to create a voltage difference between the stop and restart points.
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Release time：2024-10-08 14:42 reading：454 Continue reading>>
Murata Unveils the World’s Smallest Multilayer Ceramic Capacitor with the First 006003-inch Size (0.16mm×0.08mm) Device
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Murata Unveils the World’s Smallest Multilayer Ceramic Capacitor with the First 006003-inch Size (0.16mm×0.08mm) Device

　　Murata Manufacturing Co. Ltd has expanded its innovative range of multilayer ceramic capacitors (MLCCs) with yet another groundbreaking addition. Exemplifying Murata’s continual commitment for minimization, it has developed the world’s first 006003-inch size (0.16 mm x 0.08 mm) MLCC. This achievement represents a volume ratio approximately 75% lower than the existing smallest product, the 008004-inch size (0.25×0.125mm).　　In recent years, as electronic devices become more sophisticated and compact, the number of electronic components installed has increased, while simultaneously the space required for installation has been reduced. As electronic devices continue to advance in intelligence, there has been a corresponding increase in the incorporation of MLCCs across all types of electronic devices, with the latest smartphones utilizing up to 1000 units. Against this background, there is a growing need for ultra-compact products that enable high-density component mounting with limited mounting space.　　Since its inception in 1944, Murata has been committed to the exploration and advancement of ceramic capacitors, nurturing its unparalleled understanding of raw materials, manufacturing processes, and production technologies. In 2014, Murata successfully brought to market the world’s first 008004-inch size (0.25×0.125mm) multilayer ceramic capacitors, which have experienced growing utilization in smartphone modules and wearable devices. The creation of this MLCC is the outcome of years of focused R&D in elemental technologies, resulting in a device that measures just 0.16mm x 0.08mm x 0.08mm (L/W/T).　　“Under our slogan 'Innovator in Electronics' we will continue to lead the electronics industry by providing innovative products and developing technologies,” said Hidetoshi Nakagawa, General Manager of Ceramic Capacitor Marketing at Murata Manufacturing Co Ltd. He continued, “This product is another world’s first in a long line of Murata’s market defining MLCCs and will significantly contribute to the future miniaturization and improvement of our customer’s electronic devices.”　　This revolutionary product will be showcased at Murata’s booth (6H104) during the CEATEC JAPAN 2024 event, scheduled to take place at Makuhari Messe in Chiba Prefecture on October 15, 2024. For further information on CEATEC 2024 and tickets visit here
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Release time：2024-09-26 11:09 reading：484 Continue reading>>
How to Discharge a Capacitor : A Step-by-Step Guide
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How to Discharge a Capacitor : A Step-by-Step Guide

　　Capacitors are essential components in electronic circuits, storing electrical energy for later use. However, when working with capacitors, it’s crucial to handle them properly to ensure safety and prevent damage. One important aspect of working with capacitors is “How to Discharge a Capacitor”. In this guide, we’ll walk you through the steps to safely discharge a capacitor, why it’s necessary, and the precautions you should take.　　What is capacitors?Before diving into the discharge process, it’s helpful to understand what capacitors are and how they function. A capacitor is an electrical component that stores and releases energy in the form of an electric charge. It consists of two conductive plates separated by an insulating material called a dielectric. When a capacitor is charged, it holds a voltage difference between its plates, which can persist even after power is disconnected.　　Why Discharge a Capacitor?1. Safety: Capacitors can retain a significant amount of charge even after the power is turned off. Discharging a capacitor is crucial to avoid electric shocks or damage to electronic components.　　2. Maintenance and Repair: When servicing electronic devices, discharging capacitors ensures that there are no residual charges that could interfere with repairs or adjustments.　　3. Circuit Design: In some cases, you might need to discharge a capacitor to reset or test electronic circuits.　　How to discharge a capacitor?1. Safety First: Power Off the Device　　– Unplug the Device: Ensure the device or circuit is completely disconnected from the power source. This is the most critical step in preventing electrical shocks.　　– Wait for a Safe Period: Even after disconnecting power, give the capacitor some time to self-discharge. However, don’t rely solely on this; always use proper discharge methods.　　2. Use Proper Discharge Tools　　– Discharge Tool: For high-voltage capacitors, it’s advisable to use a dedicated capacitor discharge tool, which often includes a resistor to safely dissipate the charge.　　– Insulated Tools: For lower-voltage capacitors, you can use insulated screwdrivers or pliers.　　3. Discharge Process　　– Connect the Discharge Tool: If using a discharge tool with a resistor, connect it across the capacitor’s terminals. If using a screwdriver, carefully touch the insulated handle to both terminals, ensuring you don’t touch the metal parts directly.　　– Hold for a Few Seconds: Allow the tool to stay in contact with the terminals for several seconds to ensure the capacitor is fully discharged.　　4. Verify the Capacitor is Discharged　　– Use a Multimeter: To confirm that the capacitor is completely discharged, use a multimeter to check the voltage across the terminals. A reading close to 0 volts indicates that the capacitor is safe to handle.　　5. Dispose of or Store Safely　　– Handling: Once discharged, handle the capacitor with care. If it’s to be reused, store it in a safe location where it won’t accidentally get recharged or come into contact with conductive materials.　　– Disposal: If you need to dispose of the capacitor, follow local electronic waste disposal regulations to ensure environmentally responsible handling.　　Precautions　　– Never Short the Terminals Directly: Directly shorting the capacitor terminals with a metal object can cause sparks, heat, and potential damage.　　– Use Insulated Equipment: Always use tools with proper insulation to avoid accidental electric shocks.　　– Handle with Care: Even discharged capacitors can have residual charges. Handle them carefully to avoid any accidental charge buildup.　　ConclusionDischarging a capacitor is a straightforward but essential task when working with electronic devices. By following these steps and taking the necessary precautions, you can ensure both your safety and the proper functioning of your electronic components. Always prioritize safety and use the appropriate tools to handle capacitors effectively. With these practices, you’ll be better equipped to handle capacitors in various electronic applications.
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Release time：2024-09-25 15:20 reading：437 Continue reading>>
ROHM’s New N-channel MOSFETs Offer High Mounting Reliability in Automotive Applications
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ROHM’s New N-channel MOSFETs Offer High Mounting Reliability in Automotive Applications

　　ROHM has released N-channel MOSFETs - RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB - featuring low ON-resistance ideal for a variety of automotive applications, including motors for doors and seat positioning, as well as LED headlights. Sales have begun with 10 models across 3 package types, with plans to expand the lineup in the future.　　The automotive sector is seeing a surge in the number of electronic components, driven by the demand for enhanced safety and convenience. At the same time, there is a pressing need for improved power efficiency to optimize fuel and electricity consumption. Especially for MOSFETs essential for switching applications in automotive systems, there is a growing requirement for lower ON resistance to minimize loss and heat generation.　　ROHM, which has been supplying low ON-resistance MOSFETs for consumer and industrial equipment, has now extended this technology to the automotive sector. Adapting cutting-edge medium voltage processes to meet the stringent reliability requirements of automotive products allowed us to develop 10 N-channel MOSFET models characterized by low ON resistance.　　Offered in voltage ratings of 40V, 60V, and 100V, the new products incorporate a split-gate structure to achieve low ON-resistance, contributing to higher efficiency operation in automotive applications. All models are qualified under the AEC-Q101 automotive reliability standard, guaranteeing exceptional high reliability.　　Users can select from among three package types, depending on the application. For space-constrained sets like Advanced Driver Assistance Systems (ADAS), the compact DFN2020Y7LSAA (2.0mm × 2.0mm) and HSMT8AG (3.3mm × 3.3mm) packages are ideal. For automotive power applications, the widely used TO-252 (DPAK) package (6.6mm × 10.0mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package.　　Going forward, ROHM plans to expand its lineup of medium-voltage N-channel MOSFETs to provide even greater miniaturization and higher efficiency in automotive applications. Mass production of the DFN3333 (3.3mm × 3.3mm) and HPLF5060 (5.0mm × 6.0mm) packages is scheduled for October 2024, followed by 80V products in 2025. P-channel products are also scheduled for future release.　　Application Examples◇ Vehicle motors (e.g., doors, seat positioning, power windows)　　◇ LED headlights　　◇ Car infotainment / displays　　◇ Advanced Driver Assistance Systems (ADAS)　　Internet Sales InformationOnline Distributors: DigiKey, Mouser and Farnell　　Pricing: $3.50/unit (samples, excluding tax)　　Availability: Now (OEM quantities)　　The products will be offered at other online distributors as they become available.　　(Sales Launch Date: June 2024)　　Online Distributors　　TerminologyON resistance (Ron)　　The resistance value between the Drain and Source while the MOSFET is ON. The smaller this value is, the lower the (power) loss during conduction.　　N-channel MOSFET　　A type of MOSFET that conducts when a positive voltage is applied to the Gate relative to the Source. N-channel MOSFETs are more widely adopted in the market today due to their lower ON-resistance (RDS(on)) over P-channel variants, facilitating use in a broad range of circuits.　　Split Gate Structure　　A technology that divides the gate of the MOSFET into multiple parts to efficiently regulate the flow of electrons. This ensures fast, reliable operation.　　Wettable Flank Technology　　A technique for plating the sides of the lead frame on bottom electrode packages to improve mounting reliability.　　Gull Wing Leads　　A terminal structure that spreads outwards from both sides of the package. It achieves excellent heat dissipation along with increased mounting reliability.
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Release time：2024-09-24 10:58 reading：446 Continue reading>>
ROHM's 4th Generation SiC MOSFET Bare Chips Adopted in Three EV Models of ZEEKR from Geely
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ROHM's 4th Generation SiC MOSFET Bare Chips Adopted in Three EV Models of ZEEKR from Geely

　　ROHM has announced the adoption of power modules equipped with 4th generation SiC MOSFET bare chips for the traction inverters in three models of ZEEKR EV brand from Zhejiang Geely Holding Group (Geely), a top 10 global automaker. Since 2023, these power modules have been mass produced and shipped from HAIMOSIC (SHANGHAI) Co., Ltd. - a joint venture between ROHM and Zhenghai Group Co., Ltd. to Viridi E-Mobility Technology (Ningbo) Co., Ltd, a Tier 1 manufacturer under Geely.　　Geely and ROHM have been collaborating since 2018, beginning with technical exchanges, then later forming a strategic partnership focused on SiC power devices in 2021. This led to the integration of ROHM’s SiC MOSFETs into the traction inverters of three models: the ZEEKR X, 009, and 001. In each of these EVs, ROHM’s power solutions centered on SiC MOSFETs play a key role in extending the cruising range and enhancing overall performance.　　ROHM is committed to advancing SiC technology, with plans to launch 5th generation SiC MOSFETs in 2025 while accelerating market introduction of 6th and 7th generation devices. What’s more, by offering SiC in various forms, including bare chips, discrete components, and modules, ROHM is able to promote the widespread adoption of SiC technology, contributing to the creation of a sustainable society.　　ZEEKR Models Equipped with ROHM’s EcoSiC™The ZEEKR X, which features a maximum output exceeding 300kW and cruising range of more than 400km despite being a compact SUV, is attracting attention even outside of China due to its exceptional cost performance. The 009 minivan features an intelligent cockpit and large 140kWh battery, achieving an outstanding maximum cruising range of 822km. And for those looking for superior performance, the flagship model, 001, offers a maximum output of over 400kW from dual motors with a range of over 580km along with a four-wheel independent control system.　　About ZEEKRZEEKR was launched in 2021 as the dedicated EV brand of Geely, a leading Chinese automaker that also owns well-established premium brands such as Volvo Cars and Lotus Cars. The name ZEEKR combines ZE, representing ZERO, the starting point of infinite possibilities, E for innovation in the electric era, and KR, the chemical symbol for krypton, a rare gas that emits light when energized. ZEEKR’s philosophy centers on harmonizing humanity, technology, and nature, aiming to redefine the perception of electric vehicles through innovative designs and technologies. The brand has garnered praise in markets outside of China, including in the US and Europe, for its impressive driving performance and range, with plans to expand sales to Western and Northern Europe.　　Please visit ZEEKR's website for more information: https://zeekrglobal.com/　　Market Background and ROHM’s EcoSiC™In recent years, there has been a push to develop more compact, efficient, lightweight electric systems to expand the adoption of next-generation electric vehicles (xEVs) and achieve environmental goals such as carbon neutrality. For electric vehicles in particular, improving the efficiency of the traction inverter, a key element of the drive system, is crucial for extending the cruising range and reducing the size of the onboard battery, heightening expectations for SiC power devices.　　As the world’s first supplier to begin mass production of SiC MOSFETs in 2010, ROHM continues to lead the industry in SiC device technology development. These devices are now marketed under the EcoSiC™ brand, encompassing a comprehensive lineup that includes bare chips, discrete components, and modules. For more information, please visit the SiC page on ROHM’s website: https://www.rohm.com/products/sic-power-devices 　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Supporting InformationROHM is committed to providing application-level support, including the use of in-house motor testing equipment Additionally, by clicking on the URL below, users can access various supporting contents on ROHM’s website that facilitate the evaluation and introduction of 4th generation SiC MOSFETs, such as SPICE and other design models, simulation circuits for common applications (ROHM Solution Simulator), and evaluation board information.　　https://www.rohm.com/products/sic-power-devices/sic-mosfet#supportInfo
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Release time：2024-09-03 10:42 reading：498 Continue reading>>

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