Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles

　　September 29, 2025 – NOVOSENSE Microelectronics, United Automotive Electronic Systems (UAES) and Innoscience have signed a strategic cooperation agreement to jointly advance power electronics for new energy vehicles (NEVs). The three parties will collaborate on the development of next-generation intelligent integrated Gallium Nitride (GaN) products. Building on their combined expertise, the new devices will deliver more reliable GaN driving and protection features, enabling higher power density and paving the way for commercial adoption across the automotive industry.

Signing Ceremony

　　GaN as a Key Driver for NEV Innovation

　　With its superior material properties, GaN is emerging as a transformative technology in automotive power electronics. Compared to traditional silicon devices, GaN significantly improves system efficiency and power density, allowing for more compact and lighter designs—addressing the core requirements of vehicle electrification and lightweighting.

　　Complementary Strengths, Shared Goals

　　Through joint R&D and application validation, NOVOSENSE, UAES and Innoscience aim to tackle critical challenges such as efficiency, reliability and cost. Together, the three parties will deliver solutions that combine high performance with competitive economics. NOVOSENSE brings extensive expertise in high-performance analog and mixed-signal IC design. UAES contributes deep knowledge in system integration and automotive applications. Innoscience adds world-leading competence in GaN device technology. This cross-disciplinary collaboration establishes a platform for innovation across the entire value chain, accelerating GaN adoption in next-generation automotive systems.

　　Dr. Xiaolu Guo, Deputy General Manager of UAES, said:“UAES has been at the forefront of automotive electronics for decades, consistently responding to industry needs through innovation. GaN technology is a vital enabler for vehicle electrification. Partnering with NOVOSENSE and Innoscience allows us to integrate capabilities from device to system level, driving GaN industrialization and delivering efficient, reliable and cost-effective solutions for our customers.”

　　Mr. Shengyang Wang, Founder, Chairman and CEO of NOVOSENSE, commented:“Upgrading the NEV industry requires deep collaboration across the value chain. By combining UAES’s system integration expertise with Innoscience’s GaN leadership and NOVOSENSE’s IC design capabilities, we are creating a powerful synergy. This strategic partnership sets a benchmark for industry collaboration, ensuring both technological breakthroughs and market value creation.”

　　Dr. Jingang Wu, CEO of Innoscience, added:“The potential of GaN in automotive power electronics is only beginning to be realized. True impact will come from aligning device innovation with system requirements. We look forward to working closely with NOVOSENSE and UAES to extend the boundaries of GaN applications in automotive electrification and to translate technological advantages into tangible industry benefits.”

　　A Step Forward for the Industry

　　This strategic cooperation marks a pivotal milestone for all three companies. NOVOSENSE, a leading Chinese automotive semiconductor supplier with nearly one billion automotive ICs shipped, complements UAES’s strong system know-how and Innoscience’s GaN device leadership. Together, the three parties will strengthen the value chain, overcome application bottlenecks, and accelerate the transition of the NEV industry toward higher efficiency and sustainability.