Spin current from heat: new material increases efficiency

发布时间:2017-11-21 00:00
作者:Ameya360
来源:Neil Tyler
阅读量:1034

  Physicists at Bielefeld University have found a way to use the heat from electronic devices to create energy, applying the heat to generate magnetic signals known as ‘spin currents’.

  According to researchers it could be possible in the future to use these signals to replace some of the electrical current currently used in electronic components.

  In a new study, physicists from the University of Greifswald, Gie?en University, and the Leibniz Institute for Solid State and Materials Research in Dresden tested which materials generated this spin current most effectively from heat. Their findings have been published in the research journal ‘Nature Communications’.

  The Bielefeld physicists are working on the basic principles for making data processing more effective and energy-efficient in the young field of ‘spin caloritronics’ and the study determines the strength of the spin current for various combinations of thin films.

  A spin current is produced by differences in temperature between two ends of an electronic component. These components are extremely small and only one millionth of a millimetre thick. Because they are composed of magnetic materials such as iron, cobalt, or nickel, they are called magnetic nanostructures.

  The physicists take two such nanofilms and place a layer of metal oxide between them usually only a few atoms thick. One of the external films is then heated and then electrons with a specific spin orientation then pass through the metal oxide. This produces the spin current.

  The teams led by Dr. Alexander B?hnke and Dr. Torsten Hübner have tested different combinations of ultra-thin films. ‘Depending on which material we used, the strength of the spin current varied markedly,’ says B?hnke. ‘That is because of the electronic structure of the materials we used.’

  According to the researchers, magnetic nanostructures with special combinations made up of cobalt, iron, silicon, and aluminium were particularly productive.

  The study is one of a number of projects in the ‘Spin Caloric Transport’ (SpinCaT) Priority Programme of the German Research Foundation (DFG).

(备注:文章来源于网络,信息仅供参考,不代表本网站观点,如有侵权请联系删除!)

在线留言询价

相关阅读
Spin Transfer, TEL Partner on MRAM Process Development
  MRAM developer Spin Transfer Technologies (STT) and capital equipment vendor Tokyo Electron Ltd. (TEL) have entered into a collaborative engineering program to jointly develop process technologies for SRAM- and DRAM-class spin-transfer torque (ST) MRAM devices.  The project will combine TEL's ST-MRAM deposition tool and knowledge of the formation capabilities of magnetic tools with STT's high-endurance perpendicular magnetic tunnel junction (pMTJ) design and device fabrication technology, the companies said. The goal of the project is to further advance ST-MRAM to provide previously unachievable levels of speed, density and endurance, they said.  MRAM (magnetoresistive random access memory) has long been seen as a potential replacement for SRAM, DRAM and flash, but development, which began in earnest in the 1990s, has been slow. To date, only one company, Everspin Technologies, has shipped working MRAM products. Everspin has been shipping MRAM since 2006, when it was part of Freescale Semiconductor, and claims to have shipped more than 60 million MRAM devices.  Embedded SRAM — pervasive in mobile, computing and industrial applications — is considered a fast and high endurance memory, but is also costly, power hungry and volatile. ST-MRAM, which is more compact, is considered less costly, nonvolatile and requires less power when storing data. But further improvements — especially in terms of fast switching and endurance — are needed for ST-MRAM to match or exceed SRAM performance.  Last August, Everspin became the first vendor to announce it was sampling MRAM with pMTJs — considered by all vendors developing MRAM to be the technology offer the best scalability, shape dependence and magnetic scalability. In January of this year, STT also began sampling pMTJs.  STT and TEL said the collaborative agreement would further each company's goal of offering compelling MRAM solutions for the embedded SRAM market initially and, eventually, the standalone DRAM market. The companies aim to develop MRAM is pMTJs smaller than 30nm, more dense than today's commercially available products.  Tom Sparkman, who took over as CEO of STT in July, said in a press statement that the partnership with TEL would speed the development of the company's technology for replacing SRAM and DRAM.  "We believe the adoption of ST-MRAM will materially exceed current expectations, and we are excited to work with TEL to revolutionize the ST-MRAM market by achieving the speed, density and endurance the industry needs,"
2017-10-17 00:00 阅读量:2124
  • 一周热料
  • 紧缺物料秒杀
型号 品牌 询价
TL431ACLPR Texas Instruments
MC33074DR2G onsemi
BD71847AMWV-E2 ROHM Semiconductor
RB751G-40T2R ROHM Semiconductor
CDZVT2R20B ROHM Semiconductor
型号 品牌 抢购
STM32F429IGT6 STMicroelectronics
TPS63050YFFR Texas Instruments
ESR03EZPJ151 ROHM Semiconductor
BU33JA2MNVX-CTL ROHM Semiconductor
BP3621 ROHM Semiconductor
IPZ40N04S5L4R8ATMA1 Infineon Technologies
热门标签
ROHM
Aavid
Averlogic
开发板
SUSUMU
NXP
PCB
传感器
半导体
相关百科
关于我们
AMEYA360微信服务号 AMEYA360微信服务号
AMEYA360商城(www.ameya360.com)上线于2011年,现 有超过3500家优质供应商,收录600万种产品型号数据,100 多万种元器件库存可供选购,产品覆盖MCU+存储器+电源芯 片+IGBT+MOS管+运放+射频蓝牙+传感器+电阻电容电感+ 连接器等多个领域,平台主营业务涵盖电子元器件现货销售、 BOM配单及提供产品配套资料等,为广大客户提供一站式购 销服务。