捷捷微电推出“新一代100V P沟道SGT MOSFET”

Release time:2022-08-02
author:Ameya360
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捷捷微电推出“新一代100V P沟道SGT MOSFET”

  捷捷微电推出新一代100V P沟道SGT MOSFET, 比起上一代设计,FOM性能改善20%,实现国际知名。先进PDFN3x3-8L及PDFN5x6-8L薄型封装,比传统SOP-8L及DPAK封装,面积缩小64%及48%,高度降低45%及55%,极为适合紧凑型终端设计。同时,PDFN5x6-8L的引脚具低应力且长达0.275mm.极大程度地改善自动光学检测(AOI)印刷电路板组装(PCBA)的焊点良率,进一步保证终端的稳定工作和长期可靠性。

  100V P沟道MOSFET的驱动电路相比N沟道MOSFET更加简单,满足超性能运算(HPC) 、工业5.0(IE)、车载电子(Autonomous Driving System, ADS)后装市场的高端负载、防反接电路、电池反向保护、B/BLDC 电机驱动、DC-DC降压转换的高边开关等应用对系统长期稳定运作,陝窄应用空间、及减少电路关键故障点的不断需求。

  新一代P沟道JPFET性能达国际知名水平。其中JMPL1050AU采用薄小型PDFN3x3-8L封装,在Vas=10V条件下,器件的RosOM.JD及FOM测量值分别低达38mQ / 760,均为国际知名水平。此外,一流的线性模式/安全工作区(SOA) 特性,使器件在大电流的工作状态下,仍能实现安全可靠的运作。极低的导通电阻有助于提高运行效能,降低系统成本,并延长器件的使用寿命。

捷捷微电推出“新一代100V P沟道SGT MOSFET”



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