Anson Mae NTH4L028N170M1 Silicon Carbide (SiC) MOSFET optimized for fast switching applications. Anson MOSFET uses planar technology to operate reliably when the grid is at a negative grid voltage drive and turn-off peak. The series provides optimum performance when driven by a 20V grid drive, but can also be used in conjunction with an 18V grid drive.
At a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Qg) of 200nC, compared to equivalent competitive devices that are closer to 300nC. A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energy applications.
The onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a TO247-4L package with a Kelvin source connection on the fourth pin that improves turn-on power dissipation and gate noise.
Characteristic
Typical value RDS(on) = 28mΩ (VGS = 20V)
Ultra-low grid charge (QG(tot)=200nC)
High speed switch with low capacitance (Coss=200pF)
100% avalanche tested
These devices are lead free and comply with the RoHS directive
Application
UPS
Dc/DC converter
Boost converter
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