Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET

　　Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET offers fast switching times, high drain current (4A maximum), and low on-state resistance in a SOT-23 (TO-236) package. The MMFTP3334K FET features a 30V maximum drain-source voltage, 1000mW maximum power dissipation, and 5.9nC typical total gate charge in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET is ideal for signal processing, drivers, and logic-level converters.

　　FEATURES

　　ESD protected gate

　　High drain current

　　Low on-state resistance

　　Fast switching times

　　Commercial-grade

　　UL 94V-0 case material

　　SOT-23 (TO-236) package style

　　Moisture Sensitivity Level (MSL) 1

　　AEC-Q101 qualified (-AQ only)

　　Lead-free, RoHS and REACH compliant

　　APPLICATIONS

　　Signal processing

　　Logic level converters

　　Drivers

　　SPECIFICATIONS

　　30V maximum drain-source voltage

　　±20V maximum gate-source voltage

　　1000mW maximum power dissipation

　　4A maximum drain current

　　16A maximum peak drain current

　　1?A maximum drain-source leakage current

　　10?A maximum gate-source leakage current

　　0.8V to 2V gate threshold voltage range

　　71mΩ to 136mΩ maximum drain-source on-state resistance range

　　280pF typical input capacitance

　　55pF typical output capacitance

　　40pf typical reverse transfer capacitance

　　5.9nC typical total gate charge

　　0.8nC typical gate-source charge

　　1.2nC typical gate-drain charge

　　13ns typical turn-on delay/rise time

　　22ns typical turn-off delay/fall time

　　1.2V maximum forward voltage

　　125K/W typical junction-to-ambient thermal resistance

　　-55°C to +150°C junction temperature range