AMEYA360;STMicroelectronics M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM

　　STMicroelectronics M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM is based on Non-Volatile Memory (NVMe) technology. This M95P16 comes with byte flexibility, page alterability, high page cycling performance, and ultra-low power consumption, equivalent to EEPROM technology. 

      The M95P16 EEPROM is organized as 4096 programmable pages of 512 bytes each, accessed through an SPI bus, with high-performance dual-and quad-SPI outputs. This M95P16 EEPROM features ultra-low power consumption, ECC for high memory reliability (DEC, TED), Schmitt trigger inputs for noise filtering, and electronic identification. The M95P16 EEPROM supports up to 80MHz clock frequency, 1.6V to 3.6V supply voltage range, and is ECOPACK2 (RoHS compliant) and halogen-free.

　　The M95P16 EEPROM offers two additional (identification) 512-byte pages. The first contains identification data and, upon request, the UID. The second can store sensitive application parameters, which later can be permanently locked in read-only mode. This M95P16 EEPROM accepts page/block/sector/chip erase commands to set the memory to an erased state.

　　FEATURES

　　ECC for high memory reliability (DEC and TED)

　　Schmitt trigger inputs for noise filtering

　　Output buffer programmable strength

　　Operating status flags for ISO26262

　　Software reset

　　Write protection by block, with top/bottom option

　　Unique ID upon request

　　Electronic identification

　　Supports SFDP (serial flash discoverable parameters) mode

　　JEDEC standard manufacturer identification

　　Package:

　　ECOPACK2 (RoHS compliant) and halogen-free packages:

　　DFN8 2mm x 3mm

　　SO8N

　　WLCSP8

　　SPECIFICATIONS

　　Interface:

　　Supports Serial Peripheral Interface (SPI) and dual/quad outputs

　　1.6V to 3.6V VCC wide voltage range

　　Temperature range:

　　-40°C to 85°C (industrial)

　　-40°C to 105°C (extended)

　　Fast read:

　　50MHz read single output

　　80MHz fast read single/dual/quad output with one dummy byte

　　Memory:

　　16 Mbit of page EEPROM

　　32-Kbyte blocks and 4-Kbyte sectors

　　512 bytes page size

　　Two identification pages

　　500k cycles on full temperature range write endurance

　　Data retention:

　　100 years

　　10 years after 500k cycles

　　Ultra-low power consumption:

　　0.6μA (typical) in deep power-down mode

　　16μA (typical) in standby mode

　　800μA (typical) for read single at 10MHz

　　1.5mA (typical) for page write

　　Current peak control <3mA

　　High write/erase performance:

　　Fast write/program/erase times:

　　2ms (typical) for byte and page write (includes auto-erase and program) for 512 bytes

　　1.2ms (typical) for page program (512 bytes)

　　1.1ms (typical) for page erase

　　1.3ms (typical) for sector erase

　　4.0ms (typical) for block erase

　　8ms (typical) for chip erase

　　Page program with buffer load