FET Feature | Silicon Carbide (SiC) |
---|---|
Package / Case | Module |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 168A |
PCN Design/Specification | CAS100H12AM1 Screw Size 15/Apr/2013 |
FET Type | 2 N-Channel (Half Bridge) |
Family | FETs - Modules |
Mounting Type | Chassis Mount |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 20A, 20V |
Power - Max | 568W |
Supplier Device Package | Module |
Standard Package | 1 |
Packaging | Bulk |
Series | Z-FET™ |
Vgs(th) (Max) @ Id | 3.1V @ 50mA |
Input Capacitance (Ciss) @ Vds | 9500pF @ 800V |