CAS100H12AM1
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  • Module
产品描述:
MOSFET 2N-CH 1200V 168A MODULE
标准包装:1
数据手册: --
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FET Feature Silicon Carbide (SiC)
Package / Case Module
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 168A
PCN Design/Specification CAS100H12AM1 Screw Size 15/Apr/2013
FET Type 2 N-Channel (Half Bridge)
Family FETs - Modules
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 20 mOhm @ 20A, 20V
Power - Max 568W
Supplier Device Package Module
Standard Package   1
Packaging   Bulk  
Series Z-FET™
Vgs(th) (Max) @ Id 3.1V @ 50mA
Input Capacitance (Ciss) @ Vds 9500pF @ 800V
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