IRFB4110GPBF | ||
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产品描述:
Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
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标准包装:1 | ||
数据手册: |
Qg - Gate Charge: | 150 nC |
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Packaging: | Tube |
Manufacturer: | Infineon |
Transistor Polarity: | N-Channel |
Technology: | Si |
RoHS: | Details |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Unit Weight: | 0.211644 oz |
Mounting Style: | Through Hole |
Rds On - Drain-Source Resistance: | 3.7 mOhms |
Number of Channels: | 1 Channel |
Pd - Power Dissipation: | 370 W |
Factory Pack Quantity: | 50 |
Brand: | Infineon Technologies |
Package / Case: | TO-220-3 |
Id - Continuous Drain Current: | 180 A |
Vgs - Gate-Source Voltage: | 20 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
数据手册: |
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