STF24N60M2
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 30W
标准包装:1
数据手册:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Pd - Power Dissipation: 30 W
Rds On - Drain-Source Resistance: 190 mOhms
Minimum Operating Temperature: - 55 C
Package / Case: TO-220-3
Mounting Style: Through Hole
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 14 ns
Series: MDmesh M2
Factory Pack Quantity: 50
Typical Turn-Off Delay Time: 15 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Transistor Type: 1 N-Channel
ECCN EAR99
Qg - Gate Charge: 29 nC
Packaging: Tube
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 4 V
Unit Weight: 0.011640 oz
Fall Time: 61 ns
Manufacturer: STMicroelectronics
Transistor Polarity: N-Channel
Brand: STMicroelectronics
RoHS:  Details
Id - Continuous Drain Current: 18 A
Rise Time: 9 ns
Maximum Operating Temperature: + 150 C
数据手册:
登录之后就可发表评论