IRF8714TRPBF
  • 量产中
  • 8-SO
  • EAR99
产品描述:
Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET® Power Mosfet - SOIC-8
标准包装:1
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Power - Max 2.5W
Rds On (Max) @ Id, Vgs 8.7 mOhm @ 14A, 10V
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Part Status Active
Manufacturer Infineon Technologies
Series HEXFET®
Vgs(th) (Max) @ Id 2.35V @ 25µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Digi-Reel®
Package / Case 8-SOIC (0.154", 3.90mm Width)
FET Feature Standard
Supplier Device Package 8-SO
Gate Charge (Qg) @ Vgs 12nC @ 4.5V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 1020pF @ 15V
ECCN EAR99
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