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| 产品描述：
MOSFET 2P-CH 30V 4.9A 8SOIC
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| 标准包装：100 | ||
| 数据手册： -- |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Drain to Source Voltage (Vdss) | 30V |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 P-Channel (Dual) |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 710pF @ 25V |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.9A, 10V |
| Power - Max | 2W |
| Supplier Device Package | 8-SO |
| Part Status | Obsolete |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
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