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| 产品描述：
MOSFET 2P-CH 3.9A 9DSBGA
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 9-UFBGA, DSBGA |
| Supplier Device Package | 9-DSBGA |
| Gate Charge (Qg) @ Vgs | 3.7nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 P-Channel (Dual) |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 595pF @ 10V |
| Rds On (Max) @ Id, Vgs | 162 mOhm @ 1A, 1.8V |
| Power - Max | 700mW |
| Current - Continuous Drain (Id) @ 25°C | 3.9A |
| Part Status | Active |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| 数据手册： |
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