EMX18T2R | ||
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产品描述:
TRANS 2NPN 12V 0.5A 6EMT
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标准包装:8000 | ||
数据手册: |
DC Current Gain hFE Max: | 270 at 10 mA at 2 V |
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Maximum DC Collector Current: | 0.5 A |
Packaging: | Reel |
Length: | 1.6 mm |
Manufacturer: | ROHM Semiconductor |
Pd - Power Dissipation: | 150 mW |
Transistor Polarity: | NPN |
Brand: | ROHM Semiconductor |
Package / Case: | EMT |
Collector- Emitter Voltage VCEO Max: | 12 V |
Height: | 0.5 mm |
Mounting Style: | SMD/SMT |
Operating Temperature | 150°C (TJ) |
Categories | Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Supplier Device Package | EMT6 |
Package / Case | SOT-563, SOT-666 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Emitter- Base Voltage VEBO: | 6 V |
Width: | 1.2 mm |
Collector- Base Voltage VCBO: | 15 V |
DC Collector/Base Gain hfe Min: | 270 |
Series: | EMX18 |
Minimum Operating Temperature: | - 55 C |
Factory Pack Quantity: | 8000 |
RoHS: | Details |
Product Category: | Bipolar Transistors - BJT |
Gain Bandwidth Product fT: | 320 MHz |
Configuration: | Dual |
Maximum Operating Temperature: | + 150 C |
Frequency - Transition | 320MHz |
Current - Collector (Ic) (Max) | 500mA |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA |
Transistor Type | 2 NPN (Dual) |
Power - Max | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 10mA, 2V |
Base Part Number | *MX18 |