IRL3103STRLPBF | ||
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产品描述:
Single N-Channel 30 V 12 mOhm 33 nC HEXFET® Power Mosfet - D2PAK
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标准包装:1 | ||
数据手册: |
Packaging: | Reel |
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Qg - Gate Charge: | 22 nC |
Pd - Power Dissipation: | 110 W |
Package / Case: | TO-252-3 |
Vgs - Gate-Source Voltage: | 16 V |
Mounting Style: | SMD/SMT |
Fall Time: | 9.1 ns |
Manufacturer: | Infineon |
Factory Pack Quantity: | 800 |
Brand: | Infineon / IR |
RoHS: | Details |
Id - Continuous Drain Current: | 64 A |
Rise Time: | 120 ns |
Type: | HEXFET Power MOSFET |
ECCN | EAR99 |
Rds On - Drain-Source Resistance: | 16 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Configuration: | Single |
Unit Weight: | 0.139332 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 8.9 ns |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 14 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Transistor Type: | 1 N-Channel |
Maximum Operating Temperature: | + 175 C |
数据手册: |
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Supplier Code:SP1027
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
800+ | $0.79593 |
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1600+ | $0.72726 |
stock | 3200 | Update On 2022-12-17 |
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Lead-Time | 0Weeks | |
Supplier SPQ/MOQ | 1/800 | |
Location | -- | |
DateCode | 2023 |
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