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| 产品描述：
Dual N-Channel 60 V 1.8 Ohm Surface Mount Power Mosfet - TSOT-26
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| 标准包装：3000 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Packaging: | Reel |
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| Qg - Gate Charge: | 0.74 nC, 0.74 nC |
| Pd - Power Dissipation: | 820 mW |
| Package / Case: | TSOT-26-6 |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Fall Time: | 440 ns, 440 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 582 ns, 582 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V, 60 V |
| Transistor Type: | 2 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 2.4 Ohms, 2.4 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V, 1.3 V |
| Vgs - Gate-Source Voltage: | +/- 12 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 131 ns, 131 ns |
| Series: | DMN61 |
| Factory Pack Quantity: | 3000 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 630 mA, 630 mA |
| Rise Time: | 301 ns, 301 ns |
| Maximum Operating Temperature: | + 150 C |
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