RHU002N06T106 | ||
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产品描述:
N-Channel 200 mW 60 V 2.4 Ohm Surface Mount Small Signal MosFet - UMT-3
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标准包装:1 | ||
数据手册: -- |
Packaging: | Reel |
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Product: | MOSFET Small Signal |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Height: | 0.8 mm |
Vgs - Gate-Source Voltage: | 20 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 15 ns |
Manufacturer: | ROHM Semiconductor |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 4 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Type: | MOSFET |
Maximum Operating Temperature: | + 150 C |
Operating Temperature | 150°C (TJ) |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 10V |
Supplier Device Package | UMT3 |
Power Dissipation (Max) | 200mW (Ta) |
Packaging | Tape & Reel (TR) |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Width: | 1.25 mm |
Rds On - Drain-Source Resistance: | 2.8 Ohms |
Pd - Power Dissipation: | 200 mW |
Package / Case: | UMT-3 |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Fall Time: | 8 ns |
Length: | 2 mm |
Series: | RHU002N06 |
Factory Pack Quantity: | 3000 |
Brand: | ROHM Semiconductor |
RoHS: | Details |
Id - Continuous Drain Current: | 200 mA |
Rise Time: | 8 ns |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2.4 Ohm @ 200mA, 10V |
Drain to Source Voltage (Vdss) | 60V |
Package / Case | SC-70, SOT-323 |
Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Lead Free Status / RoHS Status | 1 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |