BSS138WH6327XTSA1 | ||
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产品描述:
Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
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标准包装:1 | ||
数据手册: -- |
Packaging: | Reel |
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Qg - Gate Charge: | 1 nC |
Pd - Power Dissipation: | 500 mW |
Package / Case: | SOT-323-3 |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | SMD/SMT |
Fall Time: | 8.2 ns |
Forward Transconductance - Min: | 0.12 S |
Series: | BSS138 |
Factory Pack Quantity: | 3000 |
Brand: | Infineon Technologies |
Typical Turn-Off Delay Time: | 6.7 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Rds On - Drain-Source Resistance: | 3.5 Ohms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
Unit Weight: | 0.004395 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 2.2 ns |
Manufacturer: | Infineon |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | BSS138W BSS138WH6327XT H6327 SP000924068 |
RoHS: | Details |
Id - Continuous Drain Current: | 280 mA |
Rise Time: | 3 ns |
Maximum Operating Temperature: | + 150 C |