| RF4E080BNTR | ||
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| 产品描述：
30V, 8A, 17.6 MOHM, PQFN 2X2
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| 标准包装：3000 | ||
| 数据手册： |
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- 产品特性
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| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 14.5 nC |
| Pd - Power Dissipation: | 2 W |
| Package / Case: | DFN2020-8 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 5 S |
| Series: | RF4E080BN |
| Factory Pack Quantity: | 3000 |
| Typical Turn-Off Delay Time: | 33 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 17.6 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 8 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | N-Channel |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 8 A |
| Rise Time: | 10 ns |
| Maximum Operating Temperature: | + 150 C |
| RoHS | Lead free / RoHS Compliant |
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