| STF24N60DM2 | ||
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| 产品描述：
Transistor: N-MOSFET; FDmesh™ II Plus; unipolar; 600V; 11A; 30W
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 175 mOhms |
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| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Vgs - Gate-Source Voltage: | 25 V |
| Mounting Style: | Through Hole |
| Fall Time: | 15 ns |
| Manufacturer: | STMicroelectronics |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 60 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Qg - Gate Charge: | 29 nC |
| Pd - Power Dissipation: | 30 W |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.011640 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 15 ns |
| Series: | MDmesh DM2 |
| Factory Pack Quantity: | 1000 |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 18 A |
| Rise Time: | 8.7 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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