onsemi Completes Sale of Japan Fab

发布时间:2023-01-04 09:45
作者:Ameya360
来源:网络
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  onsemi has completed of the divestment of its Niigata, Japan facility to JS Foundry.

onsemi Completes Sale of Japan Fab

  onsemi has completed of the divestment of its Niigata, Japan facility to JS Foundry K.K. The sale aligns with onsemi’s fab-liter strategy to expand gross margin and improve its financial results by reducing fixed cost footprint.

  JS Foundry was founded through a partnership between Mercuria Investment Co. Ltd and Sangyo Sosei Advisory Corp. Inc. Mercuria, a subsidiary of Mercuria Holdings Co. Ltd, is one of the leaders in the Japanese alternative investment space, with its investments covering different industries including manufacturing and service industries. SSA is the first financial advisor in Japan specializing in the technology, media and telecommunications (TMT) industry. Through their partnership, they established JS Foundry to be a Japanese-owned foundry company to supply semiconductors to Japanese customers.

  “After an in-depth search for a buyer for the last two years, we are confident to have found the right partner for the facility in JS Foundry,” said Hassane El-Khoury, president and chief executive officer of onsemi. “As always, when making decisions about our manufacturing structure and facilities across the globe, we consider the well-being of employees and seek to create a smooth transition for everyone involved. We look forward to a bright future for JS Foundry K.K. and Niigata employees, who we thank for their hard work and commitment to onsemi.”

  JS Foundry is planning to use the site as the foundation for its new foundry business in Japan. To ensure continuity of supply to its existing customers, onsemi has entered into a wafer supply agreement with JS Foundry K.K. to continue existing wafer fabrication at the site.


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onsemi’s EliteSiC Portfolio Touts High-efficiency Performance
  onsemi will showcase three new members of its EliteSiC silicon carbide (SiC) family at the Consumer Electronics Show (CES) 2023 in Las Vegas.  onsemi will showcase three new members of its EliteSiC silicon carbide (SiC) family—the 1.7kV EliteSiC MOSFET and two 1.7kV avalanche-rated EliteSiC Schottky diodes—at the Consumer Electronics Show (CES) 2023 in Las Vegas. The new devices provide reliable, high-efficiency performance for energy infrastructure and industrial drive applications and highlight onsemi’s position as a leader in industrial silicon carbide solutions.  With the 1.7kV EliteSiC MOSFET (NTH4L028N170M1), onsemi delivers higher breakdown voltage (BV) SiC solutions, required for high-power industrial applications. The two 1.7kV avalanche-rated EliteSiC Schottky diodes (NDSH25170A, NDSH10170A) allow designers to achieve stable high-voltage operation at elevated temperatures while offering high efficiency enabled by SiC.  “By providing best-in-class efficiency with reduced power losses, the new 1.7kV EliteSiC devices reinforce the high standards of superior performance and quality for products in our EliteSiC family as well as further expand the depth and breadth of onsemi’s EliteSiC,” said Simon Keeton, executive vice president and general manager, Power Solutions Group, onsemi. “Together with our end-to-end SiC manufacturing capabilities, onsemi offers the technology and supply assurance to meet the needs of industrial energy infrastructure and industrial drive providers.”  Renewable energy applications are consistently moving to higher voltages with solar systems from 1.1kV to 1.5kV DC Buses. To support this change, customers require MOSFETs with a higher BV. The new 1.7kV EliteSiC MOSFET offers a maximum Vgs range of -15V/25V, making it suitable for fast switching applications where gate voltages are increasing to -10V, delivering increased system reliability.  At a test condition of 1.2kV at 40A, the 1.7kV EliteSiC MOSFET achieves a gate charge (Qg) of 200nC – which is market-leading compared to equivalent competitive devices that are closer to 300nC. A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energy applications.  At a BV rating of 1.7kV, the EliteSiC Schottky diode devices offer improved margin between the maximum reverse voltage (VRRM) and the peak repetitive reverse voltage of the diode. The new devices also provide excellent reverse leakage performance with a maximum reverse current (IR) of just 40μA at 25°C and 100μA at 175°C – significantly better than competitive devices that are often rated at 100μA at 25°C.
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