Ameya360:STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor

发布时间：2023-02-21 11:39
作者：Ameya360
来源：网络
阅读量：3084

　　STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor offers 650V and 15A while combining well-established packaging technology. The SGT120R65AL G-HEMT device features extremely low conduction losses, high current capability, and ultra-fast switching operation. These features allow the STM SGT120R65AL to achieve high power density and unbeatable efficiency.

Ameya360:STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor

　　FEATURES

　　Enhancement mode normally-off transistor

　　Very high switching speed

　　High power management capability

　　Extremely low capacitances

　　Kelvin source pad for optimum gate driving

　　Zero reverse recovery charge

　　APPLICATIONS

　　Adapters for tablets, notebooks, and AIO

　　USB Type-C PD adapters and quick chargers

　　Wireless chargers

　　APPLICATION CIRCUIT

Ameya360:STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor


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