ROHM Semiconductor R6049YN N-Channel Power MOSFETs

发布时间：2023-09-25 15:58
作者：AMEYA360
来源：网络
阅读量：1951

　　ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options.

     FEATURES

　　》Low on-resistance

　　》Fast switching

　　》Drive circuits can be simple

　　》Si technology

　　》Enhancement channel mode

　　》Through-hole mount

　　》Halogen-free mold compound

　　》Lead-free plating and RoHS-compliant

　　SPECIFICATIONS

　　》600V drain-source breakdown voltage

　　》±22A or ±49A continuous drain current

　　》±147A pulsed drain current

　　》82mΩ on-drain-source resistance

　　》±30V gate-source voltage

　　》4V to 6V gate-source threshold voltage range

　　》100μA maximum zero gate voltage drain current

　　》±100nA maximum gate-source leakage current

　　》49A maximum source current

　　》1.5V maximum source-drain voltage

　　》1.0Ω typical gate resistance

　　》6.5μC typical reverse recovery charge

　　》34A typical peak reverse recovery current

　　》Typical gate charge

　　。65nC total

　　。21nC source

　　。30nC drain

　　》7V typical gate plateau voltage

　　》90W or 448W power dissipation

　　》Typical capacitance

　　。2940pF input

　　。100pF output

　　。Effective output

　　.100pF energy related

　　.650pF time related

　　》Single pulse avalanche

　　。2.8A current

　　。208mJ energy

　　》Typical time

　　。38ns turn-on delay

　　。33ns rise

　　。91ns turn-off delay

　　。19ns fall

　　。380ns reverse recovery

　　》-55°C to +150°C operating temperature range

　　》TO-220AB-3, TO-220FM-3, and TO-247G-3 package options

　　INNER CIRCUIT

ROHM Semiconductor R6049YN N-Channel Power MOSFETs

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