ROHM selected as a Constituent of the Dow Jones Sustainability Asia Pacific Index for the First Time

Release time：2025-03-17
author：AMEYA360
source：ROHM
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　　ROHM has been selected for the first time as a constituent of the Dow Jones Sustainability Asia Pacific Index (DJSI Asia Pacific), one of the Dow Jones Sustainability Indices (DJSI), a leading global ESG (Environment, Social, Governance) investment indices, which is composed of companies in the Asia-Pacific region.

ROHM selected as a Constituent of the Dow Jones Sustainability Asia Pacific Index for the First Time

　　Jointly developed by U.S.-based company S&P Dow Jones Indices and RobecoSAM AG, a Swiss investment advisory firm, the DJSI is an index that evaluates companies worldwide from three perspectives - Governance & Economic, Environmental and Social. It is designed to select those that excel in terms of sustainability. It is one of the most important indicators for investors who are interested in ESG. In FY2024, 161 companies (78 companies of which are Japanese companies and 3 are in the semiconductor sector) were selected for DJSI Asia Pacific from approximately 610 major companies in the Asia-Pacific region.

　　ROHM Group will continue to strive to address social issues through our business activities and meet the expectations of our stakeholders, aiming to realize a sustainable society.


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ROHM at PCIM Europe 2025: Powerful Highlights for E-Mobility and Industrial Applications
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ROHM at PCIM Europe 2025: Powerful Highlights for E-Mobility and Industrial Applications

　　From May 6th to 8th ROHM will exhibit at the PCIM Expo & Conference, the leading international event for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, taking place in Nuremberg. On its booth 304 in hall 9, ROHM will showcase reference projects with renowned partners and present the evolution of its package designs and evaluation boards.　　"PCIM 2025 in Nuremberg is the meeting place for innovation and progress in power electronics. This is where the brightest minds in the industry come together to shape the future of e-mobility and industrial applications. We will be presenting great customer applications to showcase the possibilities offered by our products in the best possible way. Whether in the PV industry or e-mobility sectors – we are involved and would like to talk to our customers on site about the key projects of the future," says Wolfram Harnack, President at ROHM Semiconductor Europe.　　Highlights of ROHM’s presence at PCIM 2025 include:　　For automotive applications, ROHM will exhibit an inverter unit utilizing the TRCDRIVE pack™ that consists of a 2-in-1 SiC Molded Module. Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchange to enhance the performance and efficiency of motor inverters, a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs).　　Power solutions for on-board chargers (OBCs), essential for e-mobility applications, will also be on the booth. ROHM will showcase the new EcoSiC™ molded power modules suitable for OBCs, along with OBC applications adopting ROHM’s power semiconductor devices.　　ROHM’s Power Eco Family products: ROHM has grouped the four product lines of power semiconductors under the brand concept “Power Eco Family” and is contributing to the development of a sustainable ecosystem through improved application performance. We will show featured solutions and case studies at the booth.　　In this context, one application example is the new GaN Lineup: ROHM’s EcoGaN™ series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions, a subsidiary of the Murata Manufacturing Group and a leading supplier of electronic components, batteries and power supplies in Japan. Integrating ROHM’s GaN HEMTs, which combine low loss operation with high-speed switching performance, in Murata Power Solutions’ 5.5kW AI server power supply unit achieves greater efficiency and miniaturization.　　For more information, please refer to AMEYA360’s related news release.　　The details of the Power Eco Family are as follows.　　●　EcoSiC™ is a brand of devices leveraging silicon carbide which is attracting attention in the power device field for performance that surpasses silicon.　　●　EcoGaN™ comprises compact, energy-efficient devices that utilize the low ON resistance, high-speed switching characteristics of GaN to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.　　●　EcoIGBT™ is ROHM’s brand of IGBTs consisting of both devices and modules designed to meet the needs of high-voltage applications in the power device field.　　●　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.　　During the fair, ROHM’s power experts will participate in several panel discussions and conference presentations. Additionally, they will hold poster sessions at the PCIM Europe 2025 conference.　　More information regarding ROHM’s key highlights at PCIM 2025 is available here: www.rohm.com/pcim　　*EcoSiC™, EcoGaN™, EcoIGBT™, EcoMOS™ and TRCDRIVE pack™ are trademarks or registered trademarks of ROHM Co., Ltd.
2025-04-23 17:01 reading：169
ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers
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ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers

　　ROHM has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.　　The advancement of high-level data processing technologies and the acceleration of digital transformation have increased the demand for data center servers. At the same time, the number of servers equipped with advanced computing capabilities for AI processing is on the rise and is expected to continue to grow. These servers operate 24 hours a day, 7 days a week – ensuring continuous operation. As a result, conduction losses caused by the ON-resistance of multiple MOSFETs in the power block have a significant impact on system performance and energy efficiency. This becomes particularly evident in AC-DC conversion circuits, where conduction losses make up a substantial portion of total power loss – driving the need for low ON-resistance MOSFETs.　　Additionally, servers equipped with a standard hot-swap function, which allow for the replacement and maintenance of internal boards and storage devices while powered ON, experience a high inrush current during component exchanges. Therefore, to protect server components and MOSFETs from damage, a wide Safe Operating Area (SOA) tolerance is essential.　　To address these challenges, ROHM has developed its new DFN5060-8S package that supports the packaging of a larger die compared to conventional designs, resulting in a lineup of power MOSFETs that achieve industry-leading* low ON-resistance along with wide SOA capability. These new products significantly contribute to improving efficiency and enhancing reliability in server power circuits.　　The new lineup includes three products. The RS7E200BG (30V) is optimized for both secondary-side AC-DC conversion circuits and hot-swap controller (HSC) circuits in 12V power supplies used in high-performance enterprise servers. The RS7N200BH (80V) and RS7N160BH (80V) are ideal for secondary AC-DC conversion circuits in 48V AI server power supplies.　　All three models feature the newly developed DFN5060-8S package (5.0mm × 6.0mm). The package increases the internal die size area by approximately 65% compared to the conventional HSOP8 package (5.0mm × 6.0mm). As a result, the RS7E200BG (30V) and RS7N200BH (80V) achieve ON-resistances of 0.53mΩ and 1.7mΩ (at VGS = 10V), respectively – both of which rank among the best in the industry in the 5.0mm × 6.0mm class, significantly contributing to higher efficiency in server power circuits.　　Moreover, ROHM has optimized the internal clip design to enhance heat dissipation, further improving SOA tolerance, which contributes to ensuring application reliability. Notably, the RS7E200BG (30V) achieves an SOA tolerance of over 70A at a pulse width of 1ms and VDS = 12V, which is twice that of the conventional HSOP8 package MOSFETs under the same conditions, ensuring industry-leading SOA performance in a 5.0mm × 6.0mm footprint.　　Going forward, ROHM plans to gradually begin mass production of power MOSFETs compatible with hot-swap controller circuits for AI servers in 2025, continuing to expand its lineup that contributes to greater efficiency and reliability across a wide range of applications.　　Product Lineup　　EcoMOS™ Brand　　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Application Examples　　・AC-DC conversion and HSC circuits for 12V high-performance enterprise server power supplies　　・AC-DC conversion circuits for 48V AI server power supplies　　・48V industrial equipment power supplies (i.e. fan motors)　　Terminology　　Low ON-Resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) results in lower power loss during operation.　　SOA (Safe Operating Area) Tolerance　　The range of voltage and current within which a device can operate safely without damage. Exceeding this range can lead to thermal runaway or device failure, making SOA tolerance a critical factor, especially in applications prone to inrush current or overcurrent.　　Power MOSFET　　A type of MOSFET used for power conversion and switching applications. N-channel MOSFETs are the mainstream choice, as they become conductive when a positive voltage is applied to the gate relative to the source, offering lower ON-resistance and higher efficiency than P-channel variants. Due to their low loss and high-speed switching capabilities, power MOSFETs are widely used in power circuits, motor drive circuits, and inverters.　　Hot-Swap Controller (HSC)　　A specialized integrated circuit (IC) that enables hot-swap functionality, allowing components to be inserted or removed while the power supply system remains active. It plays a crucial role in managing inrush current that occurs during component insertion, protecting both the system and connected components from damage.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered ON. Proper control of this current reduces stress on power circuit components, helping to prevent device failure and stabilize the system.
2025-04-10 13:10 reading：246
ROHM and TSMC Launch Strategic Gallium Nitride Technology Collaboration for Automotive Industry
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ROHM and TSMC Launch Strategic Gallium Nitride Technology Collaboration for Automotive Industry

　　ROHM Co., Ltd. (ROHM) announced today that ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.　　The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.　　GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies. TSMC, a leader in sustainability and green manufacturing, supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).　　The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM's EcoGaN™ series, including the 45W AC adapter (fast charger) "C4 Duo" produced by Innergie, a brand of Delta Electronics, Inc.　　"GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology" said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry."　　“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “By combining TSMC's expertise in semiconductor manufacturing with ROHM's proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”　　About TSMC　　TSMC pioneered the pure-play foundry business model when it was founded in 1987, and has been the world’s leading dedicated semiconductor foundry ever since. The Company supports a thriving ecosystem of global customers and partners with the industry’s leading process technologies and portfolio of design enablement solutions to unleash innovation for the global semiconductor industry. With global operations spanning Asia, Europe, and North America, TSMC serves as a committed corporate citizen around the world.　　        TSMC deployed 288 distinct process technologies, and manufactured 11,895 products for 528 customers in 2023 by providing broadest range of advanced, specialty and advanced packaging technology services. The Company is headquartered in Hsinchu, Taiwan.　　EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.
2025-04-02 15:36 reading：305
Mazda and ROHM Begin Joint Development of Automotive Components Using Next-Generation Semiconductors
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Mazda and ROHM Begin Joint Development of Automotive Components Using Next-Generation Semiconductors

　　Mazda Motor Corporation (hereinafter “Mazda”) and ROHM Co., Ltd. (hereinafter “ROHM”) have commenced joint development of automotive components using gallium nitride (GaN) power semiconductors, which are expected to be the next-generation semiconductors.　　(Left) Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of MAZDA / (Right) Katsumi Azuma, Member of the Board and Senior Managing Executive Officer of ROHM　　Since 2022, Mazda and ROHM have been advancing the joint development of inverters using silicon carbide (SiC) power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create innovative automotive components for next-generation electric vehicles.　　GaN is attracting attention as a next-generation material for power semiconductors. Compared to conventional silicon (Si) power semiconductors, GaN can reduce power conversion losses and contribute to the miniaturization of components through high-frequency operation.　　Both companies will collaborate to transform these strengths into a package that considers the entire vehicle, and into solutions that innovate in weight reduction and design. Mazda and ROHM aim to materialize the concept and unveil a demonstration model within FY2025, with practical implementation targeted for FY2027.　　“As the shift towards electrification accelerates in pursuit of carbon neutrality, we are delighted to collaborate with ROHM, which aims to create a sustainable mobility society with its outstanding semiconductor technology and advanced system solution capabilities, in the development and production of automotive components for electric vehicles” said Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of Mazda. “We are excited to work together to create a new value chain that directly connects semiconductor devices and cars. Through collaboration with partners who share our vision, Mazda will continue to deliver products filled with the 'joy of driving' that allows customers to truly enjoy driving, even in electric vehicles.”　　“We are very pleased to collaborate with Mazda, which pursues the 'joy of driving,' in the development of automotive components for electric vehicles” said Katsumi Azuma, Member of the board and Senior Managing Executive Officer of ROHM. “ROHM's EcoGaN™, capable of high-frequency operation, and the control IC that maximizes its performance are key to miniaturization and energy-saving. To implement this in society, collaboration with a wide range of companies is essential, and we have established various partnerships for the development and mass production of GaN. By collaborating with Mazda, which aims to create 'cars that coexist sustainably with the earth and society,' we will understand the requirements for GaN from the perspective of application and final product development, contributing to the spread of GaN power semiconductors and the creation of a sustainable mobility society.”　　EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.
2025-03-31 15:46 reading：251
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