ROHM Offers the Industry’s Largest* Library of LTspice® Models at Over 3,500 by Adding SiC and <span style='color:red'>IGBT</span>s
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ROHM Offers the Industry’s Largest* Library of LTspice® Models at Over 3,500 by Adding SiC and IGBTs

　　ROHM has expanded the library of SPICE model lineup for LTspice® of its circuit simulator. LTspice® is also equipped with circuit diagram capture and waveform viewer functions that make it possible for designers to check and verify in advance whether the circuit operation has been achieved as designed. In addition to the existing lineup of bipolar transistors, diodes, and MOSFETs, ROHM has added SiC power devices and IGBTs that increases its number of LTspice® models to more than 3,500 for discretes (which can be downloaded from product pages). This brings the amount of coverage of LTspice® models on ROHM’s website to over 80% of all products - providing greater convenience to designers when using circuit simulators that incorporate discrete products, now including power devices.　　In recent years, the increasing use of circuit simulation for circuit design has expanded the number of tools being utilized. Among these, LTspice® is an attractive option for a range of users, from students to even seasoned engineers at well-known companies. To support these and other users, ROHM has expanded its library of LTspice® models for discrete products.　　Besides product pages, ROHM has added a Design Models page in October that allows simulation models to be downloaded directly. Documentation on how to add libraries and create symbols (schematic symbols) is also available to facilitate circuit design and simulation execution.　　Going forward, ROHM will continue to contribute to solving circuit design issues by expanding the number of models compatible with various simulators while providing web tools such as ROHM Solution Simulator to meet growing customer needs.　　TerminologySPICE Model　　Data that expresses the operating characteristics of elements in mathematical equations for use in electronic circuit simulations. The SPICE model format may differ depending on the simulator (usually in the form of a text file).　　Circuit Simulator　　A software-based tool that makes it possible to design and verify electronic circuits without the need for actual electronic components.　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　The most commonly used structure in FETs.　　IGBT (Insulated Gate Bipolar Transistor)　　A power transistor that combines the high-speed switching characteristics of a MOSFET with the low conduction loss of a bipolar transistor.　　ROHM Solution Simulator　　A free electronic circuit simulation tool that runs on ROHM’s website. A wide variety of simulations are supported, from component selection and standalone device verification to system-level operational testing.
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Release time：2023-12-06 11:52 reading：1900 Continue reading>>
Ameya360:Renesas Introduces New Gate Driver IC for <span style='color:red'>IGBT</span>s and SiC MOSFETs Driving EV Inverters
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Ameya360:Renesas Introduces New Gate Driver IC for IGBTs and SiC MOSFETs Driving EV Inverters

　　TOKYO, Japan — Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters.　　Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU and the IGBTs and SiC MOSFETs that deliver power to the inverter. They receive control signals from the MCU in the low-voltage domain and transfer these signals to rapidly turn power devices on and off in the high-voltage domain. To accommodate the higher voltages of EV batteries, the RAJ2930004AGM has a built-in 3.75kVrms (kV root mean square) isolator, which is higher than the 2.5kVrms isolator in the previous generation product, and can support power devices with a withstand voltage of up to 1200V. In addition, the new driver IC boasts superior CMTI (Common Mode Transient Immunity) performance at 150 V/ns (nanosecond) or higher, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems. The new product offers the basic functions of a gate driver in a small SOIC16 package, making it ideal for cost-effective inverter systems.　　New Gate Driver IC for 1200V Power Devices　　The RAJ2930004AGM can be used together with Renesas IGBTs as well as with IGBTs and SiC MOSFETs from other manufacturers. In addition to traction inverters, the gate driver IC is ideal for a wide range of applications that use power semiconductors, such as on-board chargers and DC/DC converters. To help developers bring their products to market quickly, Renesas offers the xEV Inverter Kit solution that combines gate driver ICs with MCUs, IGBTs, and power management ICs, and plans to release a version incorporating the new gate driver IC in the first half of 2023.　　“Renesas is pleased to offer the second-generation gate driver IC for automotive applications with high isolation voltage and superior CMTI performance," said Akira Omichi, Vice President of Renesas' Automotive Analog Application Specific Business Division. “We will continue to drive application development for EVs by offering solutions that minimize power loss and meet high levels of functional safety in our customers’ systems.”　　Key Features of the RAJ2930004AGM Gate Driver IC　　Isolation capabilities　　·Withstand Isolation voltage: 3.75kVrms　　·CMTI (Common Mode Transient Immunity): 150V/ns　　Gate drive capabilities　　·Output peak current: 10A　　Protection/fault detection functions　　·On-chip active Miller clamp　　·Soft turn-off　　·Overcurrent protection (DESAT protection)　　·Under voltage lockout (UVLO)　　·Fault feedback　　Operating temperature range: -40 to 125°C (Tj:150°C max.)　　This product will help increase the adoption of EVs by realizing cost-efficient inverters, thereby minimizing environmental impacts.
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Release time：2023-01-28 10:54 reading：2033 Continue reading>>

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