<span style='color:red'>Samsung</span> Reportedly Completes Tesla AI5 Tape-out, Paving the Way for 2nm Ramp at Taylor Fab
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Samsung Reportedly Completes Tesla AI5 Tape-out, Paving the Way for 2nm Ramp at Taylor Fab

　　Samsung’s 2nm ramp at its Taylor fab may be moving closer to reality. According to Yonhap News, a Samsung Foundry official recently shared on LinkedIn that Tesla’s AI5 chip has completed tape-out and is expected to enter production afterwards on Samsung’s 2nm process at the Texas facility.　　As highlighted by Yonhap News, the disclosure marks the first time Samsung Foundry’s production timeline for the Tesla AI5 chip has been revealed in concrete terms.　　Notably, Samsung is not expected to be the sole foundry partner for Tesla’s next-generation AI chips. Yonhap News adds that Tesla will split AI5 production between Samsung and TSMC, while Samsung will reportedly take full responsibility for AI6 and TSMC will handle AI6.5.　　Meanwhile, Samsung is already mass-producing Tesla’s existing AI4 chip on its 7nm process at the Pyeongtaek foundry line, with the upgraded AI4 version also expected to be produced at the same campus, according to Yonhap News.　　Taylor Fab Becomes Key to Samsung’s Foundry Recovery　　The positive development, as noted by The Guru, also signals that preparations for Samsung’s Taylor fab are accelerating. Samsung began moving key front-end and back-end semiconductor equipment into the facility in late April and has deployed core engineers from its South Korean headquarters to secure initial yields, the report adds.　　As previously reported by The Elec, Samsung has reaffirmed that the Texas fab will begin ramp production in 2027. Beyond standard 2nm, industry observers cited by the report also expect Samsung to introduce its SF2P+ (second-generation enhanced 2nm process) at the facility, further strengthening its advanced-node capabilities.　　A successful 2nm ramp at Taylor could provide fresh momentum for Samsung Foundry’s long-awaited recovery after years of losses, ET News reports. With its mid- to long-term order backlog nearing KRW 50 trillion, Samsung is also expanding its foundry customer base beyond Tesla, securing partnerships with major tech companies including Meta and Anthropic, the report adds.
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Release time：2026-07-14 15:24 reading：174 Continue reading>>
<span style='color:red'>Samsung</span> Reportedly Developing 4nm GAIA AI PC Chip; Mass Production Targeted as Early as 2027
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Samsung Reportedly Developing 4nm GAIA AI PC Chip; Mass Production Targeted as Early as 2027

　　Samsung is reportedly preparing to enter the AI PC chip market. According to Hankyung, industry sources say Samsung Electronics’ System LSI Business under the Device Solutions (DS) Division is developing GAIA, a 4nm AI accelerator for AI PCs. Prototype chips have reportedly already been provided to major customers, including Lenovo and HP, for performance validation, with mass production targeted as early as 2027.　　Samsung plans to pair GAIA with processing-in-memory (PIM), a next-generation DRAM technology that performs computations directly within memory, as the report indicates. Unlike traditional PC processors, GAIA is designed specifically for AI workloads, with an optimized NPU architecture aimed at efficiently handling generative AI tasks.　　The reported move follows Samsung’s earlier attempt to enter the PC chip market 14 years ago with an Exynos application processor that powered Samsung Chromebooks in 2012. However, it failed to break Intel’s dominance and withdrew from the business roughly two years later.　　AI PC Chip Competition Intensifies　　Samsung’s reported move positions it alongside a growing number of companies targeting the AI PC market. The report says the segment remains in its early stages and has yet to produce a dominant player as the AI agent era begins to emerge. Companies including NVIDIA, Qualcomm, Intel, and Huawei are already competing in the space. NVIDIA unveiled its next-generation RTX Spark AI PC chip in May, while Qualcomm first introduced the Snapdragon X Elite in 2023 before expanding its lineup with the entry-level Snapdragon C.　　EBN News says Samsung Electronics aims to differentiate itself by leveraging its leadership in memory alongside the AI chip design expertise gained from developing smartphone APs and mobile NPUs. Industry observers believe that combining AI accelerators with processing-in-memory (PIM) technology could enhance both AI processing performance and power efficiency.　　Industry observers cited by Hankyung say the success of Samsung’s AI PC chip initiative will depend largely on its ability to secure major customers and bring the product to market. If the company achieves mass production and builds a stable supply chain, the business could emerge as a key growth driver, helping the System LSI Business address its long-standing structural losses.　　Despite the growth opportunity, Samsung’s expansion into the AI accelerator market may also present strategic challenges. Hankyung notes that companies including NVIDIA and Qualcomm, which Samsung is expected to compete against in the AI PC market, are also among Samsung Foundry’s key customers.
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Release time：2026-07-13 13:53 reading：185 Continue reading>>
SK Group Chairman Joins ADR Listing Event; <span style='color:red'>Samsung</span> Reportedly Seeks Big Tech Foundry Orders at Sun Valley
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SK Group Chairman Joins ADR Listing Event; Samsung Reportedly Seeks Big Tech Foundry Orders at Sun Valley

　　SK Group Chairman Chey Tae-won is attending SK hynix’s American Depositary Receipt (ADR) listing ceremony on Nasdaq in New York on the morning of July 10 local time. According to ETNews, in addition to meeting with global investors, Chey is expected to hold discussions with major customers on expanding AI memory cooperation. The report also says he may meet with executives from leading tech companies, including NVIDIA and Tesla, during his U.S. visit.　　As the report notes, Chey’s attendance at the event is seen as an effort to showcase SK hynix’s AI memory competitiveness and long-term growth potential to global investors. The report adds that the ADR listing was intended to help the company achieve a valuation in global capital markets that better reflects its role as a key enabler of AI infrastructure expansion.　　The ADR offering is valued at approximately KRW 43 trillion and involves the issuance of up to 17.79 million new shares, representing about 2.5% of the company’s total outstanding shares. The report says the proceeds will be used to finance construction of the first fab at the Yongin semiconductor cluster, the Cheongju P&T7 advanced packaging fab, and the purchase of manufacturing equipment, including extreme ultraviolet (EUV) scanners.　　Samsung Courts Big Tech at Sun Valley　　Samsung executives are also in the U.S., where Samsung Electronics Chairman Jay Y. Lee has attended the Sun Valley Conference alongside Han Jin-man, President and Head of the Foundry Business. According to ZDNet, the move reflects Samsung’s push to secure AI semiconductor orders from major technology companies. Lee is accompanied this year by Han Jin-man, who was appointed head of Samsung’s foundry business late last year. The report says Han is expected to support discussions on securing foundry orders from major tech companies during the conference.　　Against this backdrop, attention has turned to potential foundry customers. According to The Korea Herald, one of the most closely watched meetings is with Apple executives, including CEO Tim Cook, incoming CEO John Turnus, and Senior Vice President of Services Eddy Cue. The report says Samsung Foundry, which secured an order for iPhone image sensor chips last August, is aiming to join Apple’s application processor (AP) supply chain, currently served by TSMC.　　Beyond Apple, The Korea Herald also notes that Amazon CEO Andy Jassy and OpenAI CEO Sam Altman are attending the conference. Both companies are developing in-house AI chips to compete with NVIDIA, already source High Bandwidth Memory (HBM) from Samsung Electronics, and are viewed as potential Samsung Foundry customers.
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Release time：2026-07-10 10:56 reading：246 Continue reading>>
<span style='color:red'>Samsung</span>’s 2Q Operating Profit Soars 1,810% to Record KRW 89.4T, Reportedly Surpassing NVIDIA and Apple
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Samsung’s 2Q Operating Profit Soars 1,810% to Record KRW 89.4T, Reportedly Surpassing NVIDIA and Apple

　　Amid surging DRAM and NAND prices, Samsung’s newly released second-quarter earnings guidance once again exceeded market expectations. According to the the company, cited by Hankyung, preliminary second-quarter operating profit reached KRW 89.4 trillion (US$65.6 billion), up 1,810.3% year over year. According to News 1, this would translate into an operating profit margin of 52.3%.　　Hankyung notes that the result marks Samsung’s highest quarterly operating profit on record, extending its record-breaking earnings streak to three consecutive quarters. ZDNet further highlights that the figure surpasses the quarterly operating profits of U.S. tech giants NVIDIA and Apple.　　Samsung’s record-breaking performance marks the highest quarterly operating profit ever reported by a global IT company, according to ZDNet, surpassing NVIDIA’s previous record of US$53.5 billion (approximately KRW 81.9 trillion) posted in the first quarter of fiscal 2027 (ended April 2026).　　The scale of the earnings surge is further underscored by comparisons with Samsung’s past performance. The company posted operating profit of just KRW 4.7 trillion in the same period last year, while its projected 2Q26 operating profit alone surpassed Samsung’s cumulative operating profit over the entire three-year period from 2023 to 2025, according to Reuters.　　Meanwhile, the company’s preliminary second-quarter revenue came in at roughly KRW 171 trillion, up 129.3% from a year earlier, Hankyung notes.　　Memory Prices Fuel Samsung’s Record Quarter　　The strong results were primarily driven by Samsung’s booming memory semiconductor business within its Device Solutions (DS) division, with industry observers noting that the company has been a major beneficiary of surging memory prices.　　According to ZDNet, average selling prices (ASPs) reportedly climbed more than 50% quarter over quarter for DRAM and over 60% for NAND. A separate ZDNet report also points out that the momentum is expected to continue, as Samsung Electronics is negotiating aggressively with customers to raise its third-quarter DRAM ASP by as much as 20% from the previous quarter.　　This strong performance aligns with TrendForce’s latest memory pricing survey, which indicates that the DRAM market will remain extremely tight in the third quarter of 2026, with contract DRAM prices expected to rise another 13–18%.　　However, Reuters also notes that despite another strong quarter expected from its memory business, losses in Samsung’s foundry and System LSI operations are likely to deepen, as employee bonus expenses continue to be allocated across the broader semiconductor division.
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Release time：2026-07-08 13:16 reading：324 Continue reading>>
Intel Reportedly Weighs Dual-Side Power Delivery for 14A2 to Boost Chip Density in Race With TSMC, <span style='color:red'>Samsung</span>
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Intel Reportedly Weighs Dual-Side Power Delivery for 14A2 to Boost Chip Density in Race With TSMC, Samsung

　　Intel is reportedly refining its 1.4nm roadmap with a new power delivery architecture. According to ETNews, sources say the company originally planned to rely exclusively on its PowerDirect back-side power delivery network (BSPDN) for the baseline 14A node. However, Intel is now reportedly considering a dual-side architecture for the follow-on 14A2 process that combines both front-side and back-side power delivery.　　The report says the architectural change is driven by lithography limitations as Intel pushes the pitch of its lowest metal layer (M0) to around 21nm, where stochastic defects become increasingly difficult to manage.　　Intel has previously said it aims to increase chip density by 1.3× over 18A to compete with TSMC’s N2/A14 and Samsung’s SF2Z. While 14A targets an M0 pitch of approximately 28nm, industry analysis cited by the report suggests the follow-on 14A2 could reduce it to around 21nm. The report says the resulting density gains would help justify the use of High-NA EUV lithography systems, despite requiring double patterning, which cost hundreds of billions of Korean won.　　The challenge, however, is that shrinking circuit lines below 21nm causes interconnect resistance to rise exponentially. The report says the nano Through-Silicon Via (nTSV) infrastructure built for back-side power delivery alone may no longer meet the current density requirements of the transistors, leading to severe IR drop, or voltage loss. Intel is therefore expected to keep the back-side power delivery network as the primary power path while repurposing portions of the front-side metal layers to carry supplemental power and clock signals.　　The report says the hybrid architecture is a design compromise aimed at preserving sufficient power margin as Intel pushes toward more aggressive scaling while confronting lithography limitations. Although it adds routing complexity, the approach is viewed as necessary to achieve the targeted 21nm M0 pitch.　　Intel’s reported move also comes as TSMC advances its Super Power Rail (SPR) backside power delivery roadmap, with A16 slated for volume production in 2027 and A12 targeted for 2029, both incorporating the technology for AI and HPC applications, according to Tom’s Hardware.　　Roadmap Comparison　　The ETNews report also highlights Intel’s tight development timeline. According to its roadmap, the 14A process is scheduled to enter risk production in 2028, followed by volume production in 2029. Intel is also expected to distribute version 0.9 of its 14A Process Design Kit (PDK) to external customers in October, the report adds.　　By the time Intel reaches risk production, however, TSMC is expected to already be shipping commercial products built on its A14 process. The report notes that TSMC had already achieved stable yields on its N2 process during 2025–2026 and entered the market in line with Apple’s product launch schedule. As for Samsung, The Elec reports that the company has recently reaffirmed plans to begin mass production of its 1.4nm process in 2029, followed by the enhanced SF1.4+ node in 2030.
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Release time：2026-07-07 11:21 reading：330 Continue reading>>
<span style='color:red'>Samsung</span> Reportedly Seeks Up to 20% 3Q26 DRAM Price Increase; LPDDR Hikes May Exceed 20%
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Samsung Reportedly Seeks Up to 20% 3Q26 DRAM Price Increase; LPDDR Hikes May Exceed 20%

　　Samsung is reportedly pushing for another wave of memory price increase in 3Q26. According to ZDNet, Samsung Electronics is negotiating aggressively with customers to raise its third-quarter DRAM average selling price (ASP) by as much as 20% from the previous quarter. An industry source added that LPDDR, which is facing severe supply bottlenecks across both the server and mobile markets, could also see price hikes exceeding 20%, although it remains unclear whether customers will accept the full increases.　　Samsung’s pricing push comes as the broader DRAM market remains exceptionally tight. According to TrendForce, supply conditions are expected to stay extremely constrained in the third quarter of 2026. However, weaker demand from consumer applications and the impact of a higher comparison base are expected to moderate contract price increases to 13–18% QoQ.　　Notably, the ZDNet report says Samsung’s DRAM ASP has risen faster than SK hynix’s. Industry observers attribute the stronger growth to Samsung’s larger share of commodity DRAM, where prices are more volatile, as well as its more aggressive pricing strategy.　　The report also notes that Samsung’s DRAM ASP increased by more than 90% quarter over quarter in the first quarter, with second-quarter growth estimated at 50% to 60%. The company is now targeting another increase of around 20% in the third quarter. By comparison, SK hynix, whose product mix has a higher proportion of HBM, is expected to see a smaller ASP increase.　　Long-Term Pricing Outlook　　The ZDNet report adds that DRAM prices are expected to remain relatively stable going forward. While the pace of price increases is likely to moderate, a growing share of shipments is being secured under long-term supply agreements (LTAs) with key customers.　　Micron disclosed during its earnings release late last month that it had signed 16 LTAs with customers, the report notes. Such agreements reflect customers’ expectations that memory supply will remain tight over the medium to long term. The expansion of LTAs with price floors, together with HBM price renegotiations, should help prevent a sharp downturn in the DRAM market next year, as ZDNet points out.　　The trend toward LTAs has also extended into the automotive sector. Reuters recently reported that Micron signed a long-term memory supply agreement with General Motors, highlighting how customers are increasingly locking in supply amid continued tight market conditions.
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Release time：2026-07-06 13:04 reading：327 Continue reading>>
<span style='color:red'>Samsung</span> Reportedly Restarts 1.4nm Push, Targets 2029 Mass Production to Close Gap with TSMC, Intel
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Samsung Reportedly Restarts 1.4nm Push, Targets 2029 Mass Production to Close Gap with TSMC, Intel

　　As Intel and TSMC both target 1.4nm mass production around 2028-29, Samsung—after reportedly delaying its own roadmap—is now re-entering the race. According to The Bell, the company has resumed efforts to commercialize its 1.4nm (SF1.4) foundry process, with mass production now slated for 2029, placing it slightly behind its leading rivals.　　Samsung is also understood to have recently requested early development of process equipment from domestic and overseas partners. As noted by the report, it has recently shared its 1.4nm process roadmap with major semiconductor equipment makers, including Applied Materials and Lam Research.　　Notably, the report, citing industry sources, points out that Samsung Electronics has already installed ASML’s next-generation High-NA extreme ultraviolet (EUV) lithography equipment at its NRD-K facility. The High-NA EUV tools are understood to be applied to select layers starting from the 1.4nm process, the report explains.　　Why Samsung Delayed 1.4nm Plans　　The Bell adds that the original 2027 target has been pushed back to 2029, as Samsung redirects focus toward strengthening its 2nm (SF2) and derivative SF2P processes, signaling a shift toward yield stabilization and process optimization over aggressive node advancement.　　This strategic pivot is also reflected at the product level. A previous Global Economic News report suggested that Samsung has shifted the manufacturing process for its next-generation flagship smartphone processor, the Exynos 2800, from the originally planned 1.4nm node to an advanced version of its 2nm process.　　A Closer Look at 1.4nm Plans for Intel, TSMC　　Samsung Electronics’ renewed push into its 1.4nm process is drawing attention over whether it can narrow the technology gap with rivals such as TSMC and Intel. According to Economic Daily News, TSMC is targeting 1.4nm pilot production as early as 3Q27, with mass production planned for 2H28.　　However, Tom’s Hardware notes that TSMC is expected to skip ASML’s High-NA EUV tools through 2029, meaning its 1.4nm node would proceed without the advanced system being adopted by Intel and Samsung.　　For Intel, Reuters reports that its 18A-P process has already entered pilot production, with the company reportedly targeting 14A risk production in 2028, followed by high-volume manufacturing in 2029.
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Release time：2026-07-01 11:39 reading：436 Continue reading>>
Korea’s High-Purity CO₂ Inventory Reportedly Falls Below One Month; <span style='color:red'>Samsung</span>, SK hynix Under Pressure
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Korea’s High-Purity CO₂ Inventory Reportedly Falls Below One Month; Samsung, SK hynix Under Pressure

　　Recent geopolitical tensions have created another potential bottleneck for Korea’s semiconductor supply chain. The supply of high-purity carbon dioxide (CO₂) used in advanced semiconductor manufacturing has reportedly tightened. According to The Elec, industry sources say total inventory across the supply chain has recently fallen below one month’s supply. Under normal conditions, semiconductor manufacturers and gas suppliers each maintain about two weeks of inventory, equivalent to roughly one month’s supply in total.　　Samsung Electronics is estimated to consume approximately 1,800–2,000 metric tons of high-purity CO₂ each month, while SK hynix uses roughly 600–700 metric tons, the report says.　　The report notes that production at Samsung Electronics and SK hynix has not yet been affected. However, shrinking inventory buffers have prompted both companies to step up procurement efforts, although additional supply remains difficult to secure even at higher prices.　　Still, according to Mydrivers, sources say that if supply tightness persists, Samsung and SK hynix’s advanced DRAM and NAND production will face pressure, making price increases inevitable.　　Why High-Purity CO₂ Matters for Chip Manufacturing　　High-purity CO₂ plays a key role in supercritical semiconductor cleaning processes. The Elec notes that when CO₂ exceeds its critical temperature and pressure, it enters a supercritical state that combines the properties of liquids and gases. This enables it to effectively dissolve wafer residues while penetrating deep into fine semiconductor patterns to remove contaminants, making the technology well suited for advanced semiconductor manufacturing.　　The availability of high-purity CO₂ is closely tied to the supply of its upstream feedstock. As The Elec notes, CO₂ feedstock is recovered as a byproduct of oil refining, petrochemical production, and hydrogen manufacturing. Instability in crude oil supplies caused by tensions in the Middle East, coupled with lower operating rates at South Korea’s petrochemical plants, has significantly reduced the availability of CO₂ feedstock.　　The report adds that liquefied CO₂ prices have risen by roughly 20% since the beginning of the year, with industry sources expecting supply tightness to persist through the end of 2026. South Korea’s major suppliers of high-purity CO₂ include Taekyung Chemical, Sundo Chemical, Dongkwang Chemical, and SK Airplus, with Taekyung Chemical recognized as the country’s leading supplier.　　An industry expert cited by The Elec said geopolitical risks stemming from the Middle East are once again disrupting semiconductor material supplies, following earlier disruptions involving helium, anhydrous hydrogen fluoride, and propylene glycol monomethyl ether acetate (PGMEA).
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Release time：2026-06-30 10:59 reading：389 Continue reading>>
<span style='color:red'>Samsung</span> Unveils UFS 5.0 Storage, Claims Industry’s Fastest with 10.8GB/s Speeds
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Samsung Unveils UFS 5.0 Storage, Claims Industry’s Fastest with 10.8GB/s Speeds

　　While advancing its next-generation HBM development, Samsung is also pushing forward on the NAND front, unveiling what it claims is the industry’s first and fastest Universal Flash Storage (UFS) 5.0 solution. According to Samsung, the device delivers sequential read speeds of up to 10.8 GB/s and write speeds of up to 9.5 GB/s, more than doubling the performance of the previous UFS 4.1 standard.　　Building on this performance leap, Samsung said mass production is scheduled to begin in the fourth quarter of this year, with capacities of up to 1TB. As noted by Chosun Biz, the solution is based on JEDEC’s latest embedded storage standard, UFS 5.0, and is built on the company’s ninth-generation V-NAND technology.　　According to its press release, Samsung’s UFS 5.0 is designed to enable more seamless and efficient AI experiences on next-generation mobile devices, ranging from flagship smartphones to XR headsets and AI wearables. The improved performance is expected to reduce latency and accelerate response times when running large language models (LLMs) in on-device AI applications.　　UFS 5.0 Key Specs in Focus　　Generative AI is rapidly migrating from cloud environments to on-device deployment, driving a sharp increase in the volume of data required for local processing. As a result, storage is shifting from a passive data repository into a core infrastructure layer that directly supports AI computation.　　Against this backdrop, Samsung’s new storage solution delivers sequential read speeds of up to 10.8 GB/s and sequential write speeds of up to 9.5 GB/s, more than doubling the performance of the previous UFS 4.1 standard. On the other hand, the product’s power efficiency, according to the press release, has also been improved by over 40% compared with Samsung’s UFS 4.1 solution, driven by a range of architectural enhancements including clock gating and multi-voltage design technologies.　　The device also features a more compact design. According to Samsung, the UFS 5.0 solution comes in an ultra-compact package measuring just 7.5mm × 13mm × 0.9mm, making it 16.7% smaller than its predecessor. The reduced form factor enhances design flexibility and improves internal space efficiency across a wide range of applications, including smartphones, wearables, and extended reality (XR) devices.
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Release time：2026-06-25 10:40 reading：456 Continue reading>>
<span style='color:red'>Samsung</span>, NVIDIA Deepen Ties as Talks Reportedly Expand to HBM5 Next Year and Next-Gen Groq Chips
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Samsung, NVIDIA Deepen Ties as Talks Reportedly Expand to HBM5 Next Year and Next-Gen Groq Chips

　　Following Jensen Huang’s high-profile meetings with SK hynix during his South Korea visit, Samsung Electronics Vice Chairman Jun Young-hyun met with the NVIDIA CEO on June 8 to discuss potential cooperation in HBM and foundry services. According to The Chosun Daily, Jun said the discussions focused on collaboration in HBM and foundry. He added that the near-term priority is to ensure stable supplies of HBM4 and SOCAMM this year, while the two companies also discussed longer-term collaboration beginning next year, including HBM4E, foundry services, and HBM5.　　Samsung, NVIDIA Expand Foundry Cooperation　　On the foundry front, Samsung Electronics is in discussions with NVIDIA on next-generation chip production using its advanced process technologies, including the Drive AGX Thor autonomous driving chip and the Groq language processing unit (LPU), according to Seoul Economic Daily.　　Jun said Samsung is manufacturing NVIDIA’s autonomous driving and Groq chips using 4nm and 8nm nodes, according to ZDNet. He added that the partnership also extends to next-generation Groq chips.　　As highlighted by Seoul Economic Daily, Samsung currently manufactures the third-generation Groq LPU (LP30) on its 4nm process. Jun’s remarks suggest the company is also in position to produce the next-generation LP40, despite industry expectations that TSMC could secure the order through its advanced packaging strengths.　　Samsung Details Memory Portfolio for NVIDIA　　On the memory front, Samsung Electronics is supplying HBM4 (6th-generation) memory with data transfer speeds exceeding 11.7 Gbps per pin for NVIDIA’s Vera Rubin platform, according to Yonhap News. The company is also providing LPDDR5X-based SOCAMM2 modules for the Vera CPU, as well as its PCIe Gen6-based PM1763 storage solution.　　Yonhap News adds that Samsung’s HBM4E combines DRAM core dies with a proprietary 4nm foundry base die, enabling operating speeds of 14 Gbps per pin and achieving up to 16 Gbps in testing.　　Meanwhile, Vice Chairman Jeon stopped short of confirming whether Samsung Electronics and NVIDIA would sign a long-term memory supply agreement, saying Samsung would do its utmost as a key partner to support NVIDIA’s success, according to Newspim.　　NVIDIA CEO Jensen Huang also discussed the company’s partnership with Samsung during a Q&A session following the NVIDIA Korea AI Ecosystem Reception. According to Dealsite, Huang said NVIDIA and Samsung have long collaborated in the Application-Specific Integrated Circuit (ASIC) sector and are jointly developing new ASIC products. He added that the two companies also share a long history of cooperation in memory technologies.
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Release time：2026-06-10 10:37 reading：720 Continue reading>>

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